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MAS6505 数据表(PDF) 6 Page - Micro Analog systems |
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MAS6505 数据表(HTML) 6 Page - Micro Analog systems |
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6 / 44 page ![]() DA6505.005 11 June 2018 6 (44) ELECTRICAL CHARACTERISTICS TA = -40 oC to +90oC, VDD = 1.71V to 5.5V, Typ TA = 25°C, Typ VDD = VDDIO = 1.8 V, Typ VDDS = 1.68 V, RSENSOR = 6k unless otherwise noted Parameter Symbol Conditions Min Typ Max Unit ADC Linearity INLADC GAINx=1 OSRx = ¼ OSRx = ½ OSRx = 1 OSRx = 2 OSRx = 4 OSRx = 8 OSRx = 16 x = P or T, note 1 3700 (11.2) 760 (13.5) 260 (15.1) 310 (14.8) 360 (14.6) 330 (14.7) 260 (15.1) LSB (bit) Sensor Input Linearity INLAFE GAINx=4.7 VIN=VIN_LIN_MIN...VIN_LIN_MAX OSRx = ¼ OSRx = ½ OSRx = 1 OSRx = 2 OSRx = 4 OSRx = 8 OSRx = 16 x = P or T, note 1 3800 (11.2) 610 (13.8) 340 (14.7) 470 (14.2) 510 (14.1) 460 (14.3) 430 (14.4) LSB (bit) ADC VDD Sensitivity VDDSENSADC GAINx=1, OSRx = 16, VIN=VIN_LIN_MIN...VIN_LIN_MAX Note 2 ±0.0008 %FS/V ADC Input Signal Range ISRADC VDDS=1.68V 1400 mVpp ADC Linear Input Signal Range ISRLINADC VDDS=1.68V 10%...90% (80%) of ISRADC 1120 mVpp Full Scale Output Code Range Values CODEFS 0 11184810 - Linear Range Output Code Values (10%...90% of Full Scale Code Range) CODELIN 1118481 10066329 - EEPROM size Note 3 512 bit EEPROM data write time Note 4 13 ms EEPROM data retention TA = +125 °C, AEC-Q100- 005, Note 5 20 years Note 1. Linearity in bits is calculated from output code as follows: INL [bit] = log(80%*CODEFSMAX / INL)/log(2) when integral nonlinearity (INL) is calculated from best fit line to linear input signal range containing 21 pcs analysis points. Note 2. VDD is stepped from 1.8V to 3.6V and VDD sensitivity in %FS/V calculated as VDDSENS =100%*(CODE(VDD=3.6V) –CODE(VDD=1.8V))/CODEFS/(3.6V-1.8V) Note 3. 48 bits out of 512 bits are reserved for internal EEPROM oscillator and clock oscillator trimming, temperature and pressure measurement gain and offset configurations and sensor resistance trimming. The remaining 464 bits can be freely used for storing calibration coefficients and other data. Note 4. There should be at least a 13ms delay after each EEPROM write since EEPROM programming can take up to 13ms. Note 5. Data retention values apply when extended EEPROM tests are done. Please contact Micro Analog Systems Oy if the data retention values here need to be guaranteed by comprehensive EEPROM testing. |
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