DA6505.005

11 June 2018

27 (44)

EEPROM WRITE PROCEDURE

This chapter gives instructions for writing data to the

EEPROM memory.

The 512-bit (64 byte) EEPROM memory is available

for storing trimming and calibration data on chip. The

…

calibration coefficients. The last six EEPROM bytes

trimming purposes. See table 1 describing register

and EEPROM data addresses.

Writing to

the

non-volatile

EEPROM

memory

requires supply vol

tage of 5.0V (VDD=4.5V…5.5V).

See write/read application figure 4 below. However

note that the EEPROM read is possible at wide

supply voltage range VDD=1.71V…5.5V.

The EEPROM write procedure is shown on the next

page figure 5.

In the beginning of the EEPROM write procedure the

initial conditions need to be reset. Connecting VDD

triggers power-on-reset (POR) but to make sure the

device is reset it is recommended to give an

additional reset by writing any data byte on the reset

The EEPROM is activated and write enabled by

be a wait of at least 0.2 ms before reading from or

writing to EEPROM.

Next the data can be written to the EEPROM

memory addresses one byte (8-bit) at a time. It is

necessary to have a delay of minimum 13ms after

programming each byte (8-bit). The success of each

write can be verified by reading back the data byte

(8-bit) and comparing it to the original byte (8-bit).

After all data bytes are written the EEPROM memory

is inactivated and protected from write by writing

Figure 4. Typical EEPROM write/read application circuit (VDD=+5V) in I2C bus communication

GND

SENSOR

+5V C

VDD

10µF

NOTE: In I2C bus communication the CSB pin is unused and left unconnected (floating). It has an internal pull up to VDDIO.

MCU

I/O

I/O

GND

GND

VDD

VDDIO

4.7k

4.7k

VDDIO

R2

R4

R1

R3

ADC

PI

NI

GNDS

VDDS

P

T

P

T

P

T

T

GND

VDD

CONTROL

VREFN

VREFP

OSC

EEPROM

SCK

MAS6505

SDO

CSB

VDDIO

TEST

MUX

SDO

VDDS

AFE

SDI

I2C/

SPI

GND

TD

REG

100nF

OPTIONAL TEMPERATURE

SENSING DIODE