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MPC8275VR 数据表(PDF) 8 Page - Motorola, Inc |
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MPC8275VR 数据表(HTML) 8 Page - Motorola, Inc |
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8 / 76 page ![]() 8 MPC8280 PowerQUICC II™ Family Hardware Specifications MOTOROLA DC Electrical Characteristics NOTE: Core, PLL, and I/O Supply Voltages After power up sequence is complete, VDDH and VDD/VCCSYN must track each other and both voltages must vary in the same direction. When varying in the positive direction, VDDH may vary up to 5% from nominal or 3.3 + 0.165 = 3.465 V, in which case VDD/VCCSYN must also vary upward by 5% from nominal or 1.525 + 0.075 = 1.6 V. The same applies to the negative direction: VDDH may vary downward up to -5% from nominal or 3.3 –0.165 = 3.135 V, in which case VDD/VCCSYN must vary downward by-5% from nominal or 1.525 –0.075 = 1.45 V. A/C timing specification violation may occur during the time that voltage tracking is not correct. This device contains circuitry protecting against damage due to high static voltage or electrical fields; however, it is advised that normal precautions be taken to avoid application of any voltages higher than maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused inputs are tied to an appropriate logic voltage level (either GND or VCC). Figure 2 shows the undershoot and overshoot voltage of the 60x and local bus memory interface of the MPC8280. Note that in PCI mode the I/O interface is different. Figure 2. Overshoot/Undershoot Voltage 3 DC Electrical Characteristics Table 5 shows DC electrical characteristics. 2 Note that for extended temperature parts the range is (-40) TA – 105Tj. Table 5. DC Electrical Characteristics1 Characteristic Symbol Min Max Unit Input high voltage— all inputs except TRST and PORESET2 VIH 2.0 3.465 V Input low voltage VIL GND 0.8 V CLKIN input high voltage VIHC 2.4 3.465 V CLKIN input low voltage VILC GND 0.4 V Input leakage current, VIN = VDDH 3 IIN —10 µA GND GND – 0.3 V GND – 1.0 V Not to exceed 10% GVDD of tSDRAM_CLK GVDD + 5% 4 V VIH VIL |
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