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ADP5065ACBZ-1-R7 数据表(PDF) 28 Page - Analog Devices |
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ADP5065ACBZ-1-R7 数据表(HTML) 28 Page - Analog Devices |
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28 / 40 page ![]() ADP5065 Data Sheet Rev. D | Page 28 of 40 Bit No. Mnemonic Access Default Description [1:0] IEND[1:0] R/W 01 = 52.5 mA Termination current programming bus. The values of the termination current can be programmed as per the following values: 00 = 32.5 mA. 01 = 52.5 mA. 10 = 72.5 mA. 11 = 92.5 mA. Table 19. Charging Current, Register Address 0x04 Bit Descriptions Bit No. Mnemonic Access Default Description 7 C/20 EOC R/W The C/20 bit has priority over the other settings (C/10 EOC and IEND). When this bit is set to high, C/20 programming is used. 27.5 mA minimum value. 6 C/10 EOC R/W The C/10 bit has priority over the other setting (END) but not C/20 EOC. When this bit is set to high, C/10 programming is used unless C/20 EOC is set to high. 27.5 mA minimum value. 5 Tied high in metal R 1 [4:2] ICHG[2:0] R/W 111 = 1250 mA Fast charge current programming bus. The values of the constant current charge can be programmed as per the following values: 000 = 550 mA. 001 = 650 mA. 010 = 750 mA. 011 = 850 mA. 100 = 950 mA. 101 = 1050 mA. 110 = 1150 mA. 111 = 1250 mA. [1:0] ITRK_DEAD[1:0] R/W 10 = 20 mA Trickle and weak charge current programming bus. The values of the trickle and weak charge currents can be programmed as per the following values: 00 = 5 mA. 01 = 10 mA. 10 = 20 mA. 11 = 20 mA. Table 20. Voltage Threshold, Register Address 0x05 Bit Descriptions Bit No. Mnemonic Access Default Description 7 Not used R [6:5] VRCH[1:0] R/W 11 = 260 mV Recharge voltage programming bus. The values of the recharge threshold can be programmed as per the following values: 00 = 80 mV. 01 = 140 mV. 10 = 200 mV. 11 = 260 mV. [4:3] VTRK_DEAD[1:0] R/W 01 = 2.5 V Trickle to fast charge dead battery voltage programming bus. The values of the trickle to fast charge threshold can be programmed as per following values: 00 = 2.4 V. 01 = 2.5 V. 10 = 2.6 V. 11 = 3.3 V. |
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