ADP5065ACBZ-1-R7 datasheet(7/40 Pages) AD

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Data Sheet

ADP5065

Rev. D | Page 7 of 40

ABSOLUTE MAXIMUM RATINGS

Table 4.

Parameter

Rating

VIN1, VIN2 to PGND1, PGND2

−0.5 V to +20 V

All Other Pins to AGND

−0.3 V to +6 V

Continuous Drain Current, Battery Supple-

mentary Mode, from ISO_Bx to ISO_Sx

TJ ≤ 85°C

2.2 A

TJ = 125°C

1.1 A

Storage Temperature Range

−65°C to +150°C

Operating Junction Temperature Range

−40°C to +125°C

Soldering Conditions

JEDEC J-STD-020

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

THERMAL RESISTANCE

θJA is specified for the worst-case conditions, that is, a device

soldered in a circuit board for surface-mount packages.

Table 5. Thermal Resistance

Package Type

θJA

θJC

θJB

Unit

20-Lead WLCSP1

46.8

0.7

9.2

°C/W

5 × 4 array, 0.5 mm pitch (2.75 mm × 2.08 mm); based on a JEDEC, 2S2P,

4-layer board with 0 m/sec airflow.

Maximum Power Dissipation

The maximum safe power dissipation in the ADP5065 package

is limited by the associated rise in junction temperature (TJ) on

the die. At approximately 150°C, which is the glass transition

temperature, the plastic changes its properties. Even temporarily

exceeding this temperature limit may change the stresses that

the package exerts on the die, permanently shifting the para-

metric performance of the ADP5065. Exceeding a junction

temperature of 175°C for an extended period of time can result

in changes in the silicon devices that potentially cause failure.

ESD CAUTION

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