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STM8S103F2 数据表(PDF) 60 Page - STMicroelectronics |
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STM8S103F2 数据表(HTML) 60 Page - STMicroelectronics |
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60 / 121 page ![]() Electrical characteristics STM8S103F2 STM8S103F3 STM8S103K3 60/121 DocID15441 Rev 14 Total current consumption and timing in forced reset state Current consumption of on-chip peripherals Subject to general operating conditions for VDD and TA. HSI internal RC/fCPU= fMASTER = 16 MHz, VDD = 5 V Current consumption curves The following figures show typical current consumption measured with code executing in RAM. 2. Measured from interrupt event to interrupt vector fetch 3. tWU(WFI) = 2 x 1/fmaster + 67 x 1/fCPU 4. Configured by the REGAH bit in the CLK_ICKR register. 5. Configured by the AHALT bit in the FLASH_CR1 register. 6. Plus 1 LSI clock depending on synchronization. Table 30. Total current consumption and timing in forced reset state Symbol Parameter Conditions Typ Max(1) 1. Guaranteed by design. Unit IDD(R) Supply current in reset state(2) 2. Characterized with all I/Os tied to VSS. VDD = 5 V 400 - µA VDD = 3.3 V 300 - tRESETBL Reset pin release to vector fetch -- 150 µs Table 31. Peripheral current consumption Symbol Parameter Typ Unit IDD(TIM1) TIM1 supply current(1) 1. Data based on a differential IDD measurement between reset configuration and timer counter running at 16 MHz. No IC/OC programmed (no I/O pads toggling). Not tested in production. 210 µA IDD(TIM2) TIM2 supply current(1) 130 IDD(TIM4) TIM4 supply current(1) 50 IDD(UART1) UART1 supply current (2) 2. Data based on a differential IDD measurement between the on-chip peripheral when kept under reset and not clocked and the on-chip peripheral when clocked and not kept under reset. No I/O pads toggling. Not tested in production. 120 IDD(SPI) SPI supply current (2) 45 IDD(I2C) I2C supply current(2) 65 IDD(ADC1) ADC1 supply current when converting(3) 3. Data based on a differential IDD measurement between reset configuration and continuous A/D conversions. Not tested in production. 1000 |
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