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STM32F373VC 数据表(PDF) 105 Page - STMicroelectronics

部件名 STM32F373VC
功能描述  ARM® Cortex®-M4 32b MCUFPU, up to 256KB Flash32KB SRAM, timers, 4 ADCs (16-bit Sig. Delta / 12-bit SAR), 3 DACs, 2 comp., 2.0-3.6 V
PDF  137 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F373VC 数据表(HTML) 105 Page - STMicroelectronics

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STM32F373xx
Electrical characteristics
114
6.3.20
Temperature sensor characteristics
6.3.21
VBAT monitoring characteristics
6.3.22
Timer characteristics
The parameters given in Table 68 are guaranteed by design.
Refer to Section 6.3.14: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).
Table 65. Temperature sensor calibration values
Calibration value name
Description
Memory address
TS_CAL1
TS ADC raw data acquired at
temperature of 30 °C ± 5 °C,
VDDA= 3.3 V
0x1FFF F7B8 - 0x1FFF F7B9
TS_CAL2
TS ADC raw data acquired at
temperature of 110 °C ± 5 °C
VDDA= 3.3 V
0x1FFF F7C2 - 0x1FFF F7C3
Table 66. TS characteristics
Symbol
Parameter
Min
Typ
Max
Unit
TL
VSENSE linearity with temperature
-
±1
±2
°C
Avg_Slope(1)
Average slope
4.0
4.3
4.6
mV/°C
V25
Voltage at 25 °C
1.34
1.43
1.52
V
tSTART(1)
1. Guaranteed by design.
Startup time
4
-
10
µs
TS_temp(2)(1)
2. Shortest sampling time can be determined in the application by multiple iterations.
ADC sampling time when reading the
temperature
17.1
-
-
µs
Table 67. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-50-
K
Ω
Q
Ratio on VBAT measurement
-
2
-
-
Er(1)
1. Guaranteed by design.
Error on Q
-1
-
+1
%
TS_vbat(2)
2. Shortest sampling time can be determined in the application by multiple iterations.
ADC sampling time when reading the VBAT
1mV accuracy
5-
-
µs



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