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ADP1850ACPZ-R7 数据表(PDF) 19 Page - Analog Devices |
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ADP1850ACPZ-R7 数据表(HTML) 19 Page - Analog Devices |
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19 / 32 page ![]() Data Sheet ADP1850 Rev. C | Page 19 of 32 OUTPUT CAPACITOR SELECTION Choose the output bulk capacitor to set the desired output voltage ripple. The impedance of the output capacitor at the switching frequency multiplied by the ripple current gives the output voltage ripple. The impedance is made up of the capacitive impedance plus the nonideal parasitic characteristics, the equivalent series resistance (ESR), and the equivalent series inductance (ESL). The output voltage ripple can be approximated by × + × + ∆ ≅ ∆ ESL SW OUT SW ESR L OUT L f C f R I V 4 8 1 where: ∆V OUT is the output ripple voltage. ∆I L is the inductor ripple current. RESR is the equivalent series resistance of the output capacitor (or the parallel combination of ESR of all output capacitors). LESL is the equivalent series inductance of the output capacitor (or the parallel combination of ESL of all capacitors). Solving COUT in the previous equation yields ESL SW L ESR L OUT SW L OUT L f I R I V f I C × ∆ − ∆ − ∆ × ∆ ≅ 4 1 8 Usually the capacitor impedance is dominated by ESR. The maximum ESR rating of the capacitor, such as in electrolytic or polymer capacitors, is provided in the manufacturer’s data sheet; therefore, output ripple reduces to ESR L OUT R I V × ∆ ≅ ∆ Electrolytic capacitors also have significant ESL, on the order of 5 nH to 20 nH, depending on type, size, and geometry. PCB traces contribute some ESR and ESL, as well. However, using the maximum ESR rating from the capacitor data sheet usually provides some margin such that measuring the ESL is not usually required. In the case of output capacitors where the impedance of the ESR and ESL are small at the switching frequency, for instance, where the output capacitor is a bank of parallel MLCC capaci- tors, the capacitive impedance dominates and the output capacitance equation reduces to SW OUT L OUT f V I C × ∆ ∆ ≅ 8 Make sure that the ripple current rating of the output capacitors is greater than the maximum inductor ripple current. During a load step transient on the output, for instance, when the load is suddenly increased, the output capacitor supplies the load until the control loop has a chance to ramp the inductor current. This initial output voltage deviation results in a voltage droop or undershoot. The output capacitance, assuming 0 Ω SR, required to satisfy the voltage droop requirement is approximated by SW DROOP STEP OUT f V I C × ∆ ∆ ≅ where: ∆ISTEP is the step load. ∆VDROOP is the voltage droop at the output. When a load is suddenly removed from the output, the energy stored in the inductor rushes into the capacitor, causing the output to overshoot. The output capacitance required to satisfy the output overshoot requirement can be approximated by 2 2 2 ) ( OUT OVERSHOOT OUT STEP OUT V V V L I C − ∆ + ∆ ≅ where: ∆VOVERSHOOT is the overshoot voltage during the step load. Select the largest output capacitance given by any of the previous three equations. MOSFET SELECTION The choice of MOSFET directly affects the dc-to-dc converter performance. A MOSFET with low on resistance reduces I2R losses, and low gate charge reduces transition losses. The MOSFET should have low thermal resistance to ensure that the power dissipated in the MOSFET does not result in excessive MOSFET die temperature. The high-side MOSFET carries the load current during on time and usually carries most of the transition losses of the converter. Typically, the lower the on resistance of the MOSFET, the higher the gate charge and vice versa. Therefore, it is important to choose a high-side MOSFET that balances the two losses. The conduction loss of the high-side MOSFET is determined by the equation × ≅ IN OUT DSON LOAD C V V R I P 2 ) ( where: RDSON is the MOSFET on resistance. The gate charging loss is approximated by the equation SW G PV G f Q V P × × ≅ where: VPV is the gate driver supply voltage. QG is the MOSFET total gate charge. Note that the gate charging power loss is not dissipated in the MOSFET but rather in the ADP1850 internal drivers. This power loss should be taken into consideration when calculating the overall power efficiency. |
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