| 数据搜索系统,热门电子元器件搜索 |
|
STM32L082KB 数据表(PDF) 57 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STM32L082KB 数据表(HTML) 57 Page - STMicroelectronics |
|
57 / 132 page ![]() DS10688 Rev 7 57/132 STM32L082xx Electrical characteristics 109 6.3.4 Supply current characteristics The current consumption is a function of several parameters and factors such as the operating voltage, temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program location in memory and executed binary code. The current consumption is measured as described in Figure 10: Current consumption measurement scheme. All Run-mode current consumption measurements given in this section are performed with a reduced code that gives a consumption equivalent to Dhrystone 2.1 code if not specified otherwise. The current consumption values are derived from the tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 23: General operating conditions unless otherwise specified. The MCU is placed under the following conditions: • All I/O pins are configured in analog input mode • All peripherals are disabled except when explicitly mentioned • The Flash memory access time and prefetch is adjusted depending on fHCLK frequency and voltage range to provide the best CPU performance unless otherwise specified. • When the peripherals are enabled fAPB1 = fAPB2 = fAPB • When PLL is ON, the PLL inputs are equal to HSI = 16 MHz (if internal clock is used) or HSE = 16 MHz (if HSE bypass mode is used) • The HSE user clock applied to OSCI_IN input follows the characteristic specified in Table 40: High-speed external user clock characteristics • For maximum current consumption VDD = VDDA = 3.6 V is applied to all supply pins • For typical current consumption VDD = VDDA = 3.0 V is applied to all supply pins if not specified otherwise The parameters given in Table 48, Table 23 and Table 24 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 23. ILPBUF(4) Consumption of reference voltage buffer for VREF_OUT and COMP - - 730 1200 nA VREFINT_DIV1(4) 1/4 reference voltage - 24 25 26 % VREFINT VREFINT_DIV2(4) 1/2 reference voltage - 49 50 51 VREFINT_DIV3(4) 3/4 reference voltage - 74 75 76 1. Refer to Table 38: Peripheral current consumption in Stop and Standby mode for the value of the internal reference current consumption (IREFINT). 2. Guaranteed by test in production. 3. The internal VREF value is individually measured in production and stored in dedicated EEPROM bytes. 4. Guaranteed by design. 5. Shortest sampling time can be determined in the application by multiple iterations. 6. To guarantee less than 1% VREF_OUT deviation. Table 26. Embedded internal reference voltage(1) (continued) Symbol Parameter Conditions Min Typ Max Unit |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |