| 数据搜索系统,热门电子元器件搜索 |
|
STM32L082KB 数据表(PDF) 80 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STM32L082KB 数据表(HTML) 80 Page - STMicroelectronics |
|
80 / 132 page ![]() Electrical characteristics STM32L082xx 80/132 DS10688 Rev 7 6.3.9 Memory characteristics RAM memory Flash memory and data EEPROM Table 49. RAM and hardware registers Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode(1) 1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware registers (only in Stop mode). STOP mode (or RESET) 1.65 - - V Table 50. Flash memory and data EEPROM characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Guaranteed by design. Unit VDD Operating voltage Read / Write / Erase -1.65 - 3.6 V tprog Programming time for word or half-page Erasing - 3.28 3.94 ms Programming - 3.28 3.94 IDD Average current during the whole programming / erase operation TA = 25 °C, VDD = 3.6 V - 500 700 µA Maximum current (peak) during the whole programming / erase operation -1.5 2.5 mA Table 51. Flash memory and data EEPROM endurance and retention Symbol Parameter Conditions Value Unit Min(1) NCYC(2) Cycling (erase / write) Program memory TA = -40°C to 105 °C 10 kcycles Cycling (erase / write) EEPROM data memory 100 Cycling (erase / write) Program memory TA = -40°C to 125 °C 0.2 Cycling (erase / write) EEPROM data memory 2 |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |