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STM32L082KB 数据表(PDF) 85 Page - STMicroelectronics

部件名 STM32L082KB
功能描述  Ultra-low-power 32-bit MCU Arm®-based Cortex®-M0, up to 192KB Flash, 20KB SRAM, 6KB EEPROM, USB, ADC, DACs, AES
PDF  132 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32L082KB 数据表(HTML) 85 Page - STMicroelectronics

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DS10688 Rev 7
85/132
STM32L082xx
Electrical characteristics
109
6.3.13
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 57 are derived from tests
performed under the conditions summarized in Table 23. All I/Os are CMOS and TTL
compliant.
Note:
For information on GPIO configuration, refer to application note AN4899 “STM32 GPIO
configuration for hardware settings and low-power consumption” available from the ST
website www.st.com. In addition, it is recommended to use a GPIO low-level
voltage ≤ 0.1 x VDD and a GPIO high-level voltage ≥ 0.9 x VDD, in order to have enough
margin regarding the application transient or ripple on VDD supply.
Table 57. I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Input low level voltage
TC, FT, FTf, RST
I/Os
-
-
0.3VDD
V
BOOT0 pin
-
-
0.14VDD(1)
VIH
Input high level voltage
All I/Os
0.7 VDD
--
Vhys
I/O Schmitt trigger voltage hysteresis
(2)
Standard I/Os
-
10% VDD(3)
-
BOOT0 pin
-
0.01
-
Ilkg
Input leakage current (4)
VSS ≤VIN ≤VDD
All I/Os except for
PA11, PA12, BOOT0
and FTf I/Os
--
±50
nA
VSS ≤VIN ≤VDD,
PA11 and PA12 I/Os
-
-
-50/+250
VSS ≤VIN ≤VDD
FTf I/Os
-
-
±100
VDD≤VIN ≤5 V
All I/Os except for
PA11, PA12, BOOT0
and FTf I/Os
-
-
200
nA
VDD≤VIN ≤5 V
FTf I/Os
-
-
500
VDD≤VIN ≤5 V
PA11, PA12 and
BOOT0
--
10
µA
RPU
Weak pull-up equivalent resistor(5)
VIN = VSS
25
45
65
k
Ω
RPD
Weak pull-down equivalent resistor(5)
VIN = VDD
25
45
65
k
Ω
CIO
I/O pin capacitance
-
-
5
-
pF
1. Guaranteed by characterization.
2. Hysteresis voltage between Schmitt trigger switching levels. Guaranteed by characterization results.
3. With a minimum of 200 mV. Guaranteed by characterization results.
4. The max. value may be exceeded if negative current is injected on adjacent pins.



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