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STM32L082KB 数据表(PDF) 85 Page - STMicroelectronics |
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STM32L082KB 数据表(HTML) 85 Page - STMicroelectronics |
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85 / 132 page ![]() DS10688 Rev 7 85/132 STM32L082xx Electrical characteristics 109 6.3.13 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 57 are derived from tests performed under the conditions summarized in Table 23. All I/Os are CMOS and TTL compliant. Note: For information on GPIO configuration, refer to application note AN4899 “STM32 GPIO configuration for hardware settings and low-power consumption” available from the ST website www.st.com. In addition, it is recommended to use a GPIO low-level voltage ≤ 0.1 x VDD and a GPIO high-level voltage ≥ 0.9 x VDD, in order to have enough margin regarding the application transient or ripple on VDD supply. Table 57. I/O static characteristics Symbol Parameter Conditions Min Typ Max Unit VIL Input low level voltage TC, FT, FTf, RST I/Os - - 0.3VDD V BOOT0 pin - - 0.14VDD(1) VIH Input high level voltage All I/Os 0.7 VDD -- Vhys I/O Schmitt trigger voltage hysteresis (2) Standard I/Os - 10% VDD(3) - BOOT0 pin - 0.01 - Ilkg Input leakage current (4) VSS ≤VIN ≤VDD All I/Os except for PA11, PA12, BOOT0 and FTf I/Os -- ±50 nA VSS ≤VIN ≤VDD, PA11 and PA12 I/Os - - -50/+250 VSS ≤VIN ≤VDD FTf I/Os - - ±100 VDD≤VIN ≤5 V All I/Os except for PA11, PA12, BOOT0 and FTf I/Os - - 200 nA VDD≤VIN ≤5 V FTf I/Os - - 500 VDD≤VIN ≤5 V PA11, PA12 and BOOT0 -- 10 µA RPU Weak pull-up equivalent resistor(5) VIN = VSS 25 45 65 k Ω RPD Weak pull-down equivalent resistor(5) VIN = VDD 25 45 65 k Ω CIO I/O pin capacitance - - 5 - pF 1. Guaranteed by characterization. 2. Hysteresis voltage between Schmitt trigger switching levels. Guaranteed by characterization results. 3. With a minimum of 200 mV. Guaranteed by characterization results. 4. The max. value may be exceeded if negative current is injected on adjacent pins. |
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