8

NXP Semiconductors

33982

ELECTRICAL CHARACTERISTICS

Static electrical characteristics

Table 4. Static electrical characteristics

Characteristics noted under conditions 4.5 V

 VDD  5.5 V, 6.0 V  VPWR  27 V, -40 C  TA  125 C, unless otherwise noted. Typical

values noted reflect the approximate parameter mean at TA = 25 C under nominal conditions, unless otherwise noted.

Symbol

Characteristic

Min

Typ

Max

Unit

Notes

POWER INPUT

VPWR

Battery Supply Voltage Range

Full Operational

6.0

–

27

V

IPWR(ON)

VPWR Operating Supply Current

Output ON, IHS = 0 A

––

20

mA

IPWR(SBY)

VPWR Supply Current

Output OFF, Open Load Detection Disabled, WAKE > 0.7 VDD,

RST = VLOGIC HIGH

––

5.0

mA

IPWR(SLEEP)

Sleep State Supply Current (VPWR < 14 V, RST < 0.5 V, WAKE

< 0.5 V)

TJ = 25 C

TJ = 85 C

–

–

–

–

10

50

A

VDD(ON)

VDD Supply Voltage

4.5

5.0

5.5

V

IDD(ON)

VDD Supply Current

No SPI Communication

3.0 MHz SPI Communication

–

–

–

–

1.0

5.0

mA

IDD(SLEEP)

VDD Sleep State Current

––

5.0

A

VPWR(OV)

Overvoltage Shutdown Threshold

28

32

36

V

VPWR(OVHYS)

Overvoltage Shutdown Hysteresis

0.2

0.8

1.5

V

VPWR(UV)

Undervoltage Output Shutdown Threshold

5.0

5.5

6.0

V

(9)

VPWR(UVHYS)

Undervoltage Hysteresis

–0.25–

V

(10)

VPWR(UVPOR)

Undervoltage Power-ON Reset

––

5.0

V

POWER OUTPUT

RDS(on)

Output Drain-to-Source ON Resistance

(IHS = 30 A, TJ = 25 C)

VPWR = 6.0 V

VPWR = 10 V

VPWR = 13 V

–

–

–

–

–

–

3.0

2.0

2.0

m



RDS(on)

Output Drain-to-Source ON Resistance (IHS = 30 A, TJ = 150 C)

VPWR = 6.0 V

VPWR = 10 V

VPWR = 13 V

–

–

–

–

–

–

5.1

3.4

3.4

m



RDS(on)

Output Source-to-Drain ON Resistance (IHS = 30 A, TJ = 25 C)

VPWR = -12 V

–2.0

4.0

m



(11)

IOCH0

IOCH1

Output Overcurrent High Detection Levels (9.0 V < VPWR < 16 V)

SOCH = 0

CHFK

EHFK

SOCH = 1

CHFK

EHFK

120

107

180

72

150

137

100

92

180

167

120

112

A

Notes

9.

This applies to all internal device logic that is supplied by VPWR and assumes that the external VDD supply is within specification.

10.

This applies when the undervoltage fault is not latched (IN = 0).

11.

Source-Drain ON Resistance (Reverse Drain-to-Source ON Resistance) with negative polarity VPWR.