NXP Semiconductors

13

33982

ELECTRICAL CHARACTERISTICS

POWER OUTPUT TIMING (CONTINUED)

tCNSVAL

CS to CSNS Valid Time

–

–

10

s

(24)

tOSD0

tOSD1

tOSD2

tOSD3

tOSD4

tOSD5

tOSD6

tOSD7

Output Switching Delay Time (OSD[2:0])

000

001

010

011

100

101

110

111

–

52

105

157

210

262

315

367

0.0

75

150

225

300

375

450

525

–

95

195

293

390

488

585

683

ms

tWDTO0

tWDTO1

tWDTO2

tWDTO3

Watchdog Timeout (WD[1:0])

00

01

10

11

434

207

1750

875

620

310

2500

1250

806

403

3250

1625

ms

(25)

SPI INTERFACE CHARACTERISTICS

fSPI

Recommended Frequency of SPI Operation

–

–

3.0

MHz

tWRST

Required Low-state Duration for RST

–

50

167

ns

(26)

Notes

24.

Time necessary for the CSNS to be within ±5% of the targeted value.

25.

Watchdog timeout delay measured from the rising edge of WAKE to RST from a sleep state condition to output turn-ON with the output driven

OFF and FSI floating. The values shown are for WDR setting of [00]. The accuracy of tWDTO is consistent for all configured watchdog timeouts.

26.

RST

low duration measured with outputs enabled and going to OFF or disabled condition.

Table 5. Dynamic electrical characteristics (continued)

Characteristics noted under conditions 4.5 V

 VDD  5.5 V, 6.0 V  VPWR  27 V, -40C  TA  125C, unless otherwise noted. Typical

values noted reflect the approximate parameter mean at TA = 25C under nominal conditions, unless otherwise noted.

Symbol

Characteristic

Min

Typ

Max

Unit

Notes