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M58PR512LE 数据表(PDF) 67 Page - STMicroelectronics |
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M58PR512LE 数据表(HTML) 67 Page - STMicroelectronics |
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67 / 119 page ![]() M58PR256LE, M58PR512LE, M58PR001LE Program and erase times and endurance cycles 67/119 Erase EFA block (4 KWord) 0.7 2.5 s Main array block (128 KWord) 0.9 4 s Program(3) Single cell(4) Word Program(5) 50 230 µs Single word(4) Word Program(5) 50 230 µs Buffer Enhanced Factory Program(4) 4.2 µs Buffer (512 words) Buffer Program 2.15 4.3 ms Buffer Enhanced Factory Program 2.15 ms Main block (128 KWords) Buffer Program 0.55 1.1 s Buffer Enhanced Factory Program 0.55 s EFA block (4 KWords) 0.2 0.94 Program/Erase cycles (per block) Main array block (128 KWords) 100 000 cycles EFA block (4 KWords) 100 000 Blank Check Main array block 3.2 ms 1. TA = –30 to 85 °C; VDD = 1.7 V to 2 V; VDDQ = 1.7 V to 2 V. 2. Values are liable to change with the external system-level overhead (command sequence and Status Register polling execution). 3. Excludes the time needed to execute the command sequence. 4. This is an average value on the entire device. 5. The first Word Program in a program region will take 115 µs, the subsequent words will take 50 µs to program. Table 23. Program/erase times and endurance cycles(1) (2) (continued) Parameter Condition Min Typ Typical after 100 kW/E cycles Max Unit |
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