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M58PR512LE 数据表(PDF) 98 Page - STMicroelectronics |
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M58PR512LE 数据表(HTML) 98 Page - STMicroelectronics |
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98 / 119 page ![]() Common Flash interface M58PR256LE, M58PR512LE, M58PR001LE 98/119 Table 49. Bank and erase block region information Offset(1) 1. The variable P is a pointer which is defined at CFI offset 015h. Data Description (P+22)h = 12Ch 01h Number of bank regions within the device(2) 2. Bank regions. There is one bank region, see tables 36, 37, 38, 39, 40 and 41 in Appendix A. Table 50. Bank and erase block region 1 information(1) Offset Data Description (P+23)h = 12Dh 16h Data size of this bank region information section (addressable locations including this one) (P+24)h = 12Eh 00h (P+25)h = 12Fh 08h Number of identical banks within bank region 1 (P+26)h = 130h 00h (P+27)h = 131h 11h Number of program or erase operations allowed in bank region 1: Bits 0-3: number of simultaneous program operations Bits 4-7: number of simultaneous erase operations (P+28)h = 132h 00h Number of program or erase operations allowed in other banks while a bank in this region is being erased Bits 0-3: number of simultaneous program operations Bits 4-7: number of simultaneous erase operations (P+29)h = 133h 00h Number of program or erase operations allowed in other banks while a bank in this region is being erased Bits 0-3: number of simultaneous program operations Bits 4-7: number of simultaneous erase operations (P+2A)h = 134h 01h Types of erase block regions in bank region 1 n = number of erase block regions with contiguous same-size erase blocks. Symmetrically blocked banks have one blocking region(2) (P+2B)h = 135h 0Fh(3) 1Fh(4) 3Fh(5) Bank region 1 Erase block type 1 information Bits 0-15: n+1 = number of identical-sized erase blocks in each bank Bits 16-31: n×256 = number of bytes in erase block region (P+2C)h = 136h 00h (P+2D)h = 137h 00h (P+2E)h = 138h 04h (P+2F)h = 139h 64h Bank region 1 (Erase block type 1) Minimum block erase cycles × 1000 (P+30)h = 13Ah 00h (P+31)h = 13Bh 12h Bank region 1 (Erase block type 1): bits per cell, internal ECC Bits 0-3: bits per cell in erase region Bit 4: reserved for “internal ECC used” Bits 5-7: reserved |
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