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M58PR512LE 数据表(PDF) 43 Page - STMicroelectronics |
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M58PR512LE 数据表(HTML) 43 Page - STMicroelectronics |
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43 / 119 page ![]() M58PR256LE, M58PR512LE, M58PR001LE Program operations 43/119 Figure 5. Program regions configured in control or object program mode 5.3 Program methods The device supports two types of program methods: ● Single word program method, which is used to program a single word to a specific address of the memory array. ● Buffered program methods, which can be split into two different methods: – Buffer program method, which uses the device's write buffer to speed up programming. The data is written into the write buffer and then programmed to the specified block address. – Buffer enhanced factory program method, which is developed to speed up programming in manufacturing environments where the programming time is critical. The data is written in the write buffer and then programmed to the specified block. The following sections describe the relationship between program commands and program methods in detail. See Table 13: Relationships between program methods and program modes and Table 12: Program methods available with each program mode. Program region 0 1 Kbyte (512 byte programmable) 128 Kword BLOCK Data 2 Data 4 F F F F F F F F SEGMENT 30 Data (n – 4) Data (n – 2) Data n SEGMENT 3 SEGMENT 2 SEGMENT 1 SEGMENT 0 ... Program region in control program mode F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F A halves (A3 = 0) B halves (A3 = 1) ... Object 1 Kbyte ai10135 SEGMENT 31 : : : : : Program region 1 1 Kbyte (512 byte programmable) Program region 254 1 Kbyte (512 byte programmable) Program region 255 1 Kbyte (512 byte programmable) Data 1 Data 3 Data (n – 3) Data (n – 1) SEGMENT 30 SEGMENT 3 SEGMENT 2 SEGMENT 1 SEGMENT 0 SEGMENT 31 F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F F Program region in object program mode |
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