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M24C64-R 数据表(PDF) 26 Page - STMicroelectronics |
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M24C64-R 数据表(HTML) 26 Page - STMicroelectronics |
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26 / 54 page ![]() DC and AC parameters M24C64-W M24C64-R M24C64-F M24C64-DF 26/54 DS6638 Rev 36 Figure 14. AC measurement I/O waveform Table 13. Input parameters Symbol Parameter(1) 1. Characterized only, not tested in production. Test condition Min. Max. Unit CIN Input capacitance (SDA) - - 8 pF CIN Input capacitance (other pins) - - 6 pF ZL Input impedance (E2, E1, E0, WC)(2) 2. input impedance when the memory is selected (after a Start condition). VIN < 0.3 VCC 30 - k Ω ZH VIN > 0.7 VCC 500 - k Ω Table 14. Cycling performance Symbol Parameter Test condition Max.(1) 1. Cycling performance for products identified by process letter K or T (previous products were specified with 1 million cycles at 25 °C) Unit Ncycle Write cycle endurance(2) 2. The Write cycle endurance is defined by characterization and qualification. For devices embedding the ECC functionality (see Chapter 5.1.5), the write cycle endurance is defined for group of four bytes located at addresses [4*N, 4*N+1, 4*N+2, 4*N+3] where N is an integer. TA ≤ 25 °C, VCC(min) < VCC < VCC(max) 4,000,000 Write cycle(3) 3. A Write cycle is executed when either a Page Write, a Byte write, a Write Identification Page or a Lock Identification Page instruction is decoded. When using the Byte Write, the Page Write or the Write Identification Page, refer also to Section 5.1.5: ECC (Error Correction Code) and Write cycling TA = 85 °C, VCC(min) < VCC < VCC(max) 1,200,000 Table 15. Memory cell data retention Parameter Test condition Min. Unit Data retention(1) 1. The data retention behavior is checked in production, while the data retention limit defined in this table is extracted from characterization and qualification results. TA = 55 °C 200(2) 2. For products identified by process letter K or T (previous products were specified with a data retention of 40 years at 55°C). Year |
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