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M24C64-R 数据表(PDF) 26 Page - STMicroelectronics

部件名 M24C64-R
功能描述  64-Kbit serial I²C bus EEPROM
PDF  54 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M24C64-R 数据表(HTML) 26 Page - STMicroelectronics

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DC and AC parameters
M24C64-W M24C64-R M24C64-F M24C64-DF
26/54
DS6638 Rev 36
Figure 14. AC measurement I/O waveform
Table 13. Input parameters
Symbol
Parameter(1)
1. Characterized only, not tested in production.
Test condition
Min.
Max.
Unit
CIN
Input capacitance (SDA)
-
-
8
pF
CIN
Input capacitance (other pins)
-
-
6
pF
ZL
Input impedance (E2, E1, E0, WC)(2)
2. input impedance when the memory is selected (after a Start condition).
VIN < 0.3 VCC
30
-
k
Ω
ZH
VIN > 0.7 VCC
500
-
k
Ω
Table 14. Cycling performance
Symbol
Parameter
Test condition
Max.(1)
1. Cycling performance for products identified by process letter K or T (previous products were specified with
1 million cycles at 25 °C)
Unit
Ncycle
Write cycle
endurance(2)
2. The Write cycle endurance is defined by characterization and qualification. For devices embedding the
ECC functionality (see Chapter 5.1.5), the write cycle endurance is defined for group of four bytes located
at addresses [4*N, 4*N+1, 4*N+2, 4*N+3] where N is an integer.
TA ≤ 25 °C, VCC(min) < VCC < VCC(max)
4,000,000
Write cycle(3)
3. A Write cycle is executed when either a Page Write, a Byte write, a Write Identification Page or a Lock
Identification Page instruction is decoded. When using the Byte Write, the Page Write or the Write
Identification Page, refer also to Section 5.1.5: ECC (Error Correction Code) and Write cycling
TA = 85 °C, VCC(min) < VCC < VCC(max)
1,200,000
Table 15. Memory cell data retention
Parameter
Test condition
Min.
Unit
Data retention(1)
1. The data retention behavior is checked in production, while the data retention limit defined in this table is
extracted from characterization and qualification results.
TA = 55 °C
200(2)
2. For products identified by process letter K or T (previous products were specified with a data retention of 40
years at 55°C).
Year



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