Features

•

High voltage rail up to 600 V

•

dV/dt transient immunity ±200 V/ns

•

Driver with separated sink and source path for optimal driving:

–

2.4 A and 1.2 Ω sink

–

1.0 A and 3.7 Ω source

•

High-side and low-side linear regulators for 6 V gate driving voltage

•

Fast high-side startup time: 5 µs

•

45 ns propagation delay, 15 ns minimum output pulse

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High switching frequency (> 1 MHz)

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Embedded 600 V bootstrap diode

•

Full support of GaN hard-switching operation

•

Comparator for overcurrent detection with Smart Shutdown

•

UVLO function on VCC, VHS, and VLS

•

Separated logic inputs and shutdown pin

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Fault pin for overcurrent, overtemperature and UVLO reporting

•

Stand-by function for low consumption mode

•

Separated PGND for Kelvin source driving and current shunt compatibility

•

3.3 V to 20 V compatible inputs with hysteresis and pull-down

Applications

•

Motor driver for home appliances, pumps, and compressors

•

Factory automation, servo, and industrial drives

•

E-bikes and power tools

•

Class D audio amplifiers

•

DC/DC and resonant converters, PFC, battery charger and adapters

Description

The STDRIVEG611 is a high-voltage half-bridge gate driver for N

‑channel

Enhancement Mode GaN.

The high-side driver section is designed to stand a voltage rail up to 600 V and can

be easily supplied by the integrated bootstrap diode.

High current capability, short propagation delay with excellent delay matching, and

integrated LDOs make the STDRIVEG611 optimized for driving high-speed GaN.

The STDRIVEG611 features supply UVLOs tailored to hard switching applications,

interlocking to avoid cross-conduction conditions and an overcurrent comparator with

SmartSD.

The input pins extended range allows easy interfacing with controllers. A standby pin

allows to reduce the power consumption during inactive periods or burst mode.

The STDRIVEG611 operates in the industrial temperature range, -40 °C to 125 °C.

The device is available in a compact QFN 4x5x1 mm package with 0.5 mm pitch.

QFN 4 x 5 x 1 mm

Product status link

STDRIVEG611

Product label

High voltage and high-speed half-bridge gate driver for GaN power switches

STDRIVEG611

Datasheet

DS14457 - Rev 2 - December 2024

For further information contact your local STMicroelectronics sales office.

www.st.com