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STDRIVEG611QTR 数据表(PDF) 19 Page - STMicroelectronics

部件名 STDRIVEG611QTR
功能描述  High voltage and high-speed half-bridge gate driver for GaN power switches
PDF  33 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STDRIVEG611QTR 数据表(HTML) 19 Page - STMicroelectronics

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High-side regulator input is the BOOT pin; regulator output is the VCCH pin, referred to OUT. Low-ESR ceramic
capacitor must be connected as close as possible between VCCH and OUT (CVCCL min. 47 nF, X7R, 16 V) to
obtain a clean supply voltage. A slightly higher CVCCH could be required to minimize VHS ripple when driving high
GaN QG, but the lower the CVCCH the faster the startup time.
Under recommended operating conditions, VCCH regulator can provide an average current of 10 mA.
A UVLO on VHS is there to prevent unsafe operations of low-side GaN.
When VHS voltage reaches the VHSthON threshold, the high-side driver is enabled to accept turn-on/off commands
from the input logic block.
When VHS voltage goes below the VHSthOFF threshold, high-side gate driver output is forced low.
VHS UVLO status is not signaled on the FLT pin and the low-side driver continues to operate according to inputs
and other protections.
6.5
Standby
The STDRIVEG611 is designed to reduce the current consumption of both the logic portion and low-side driver
when the STBY pin is pulled to GND. Low-side and high-side output are immediately set low to leave the half-
bridge in a three-state, while the FLT pin is forced low, and consumption is reduced if the STBY pin is pulled to
GND. The overtemperature and the comparator protections are disabled in this operating condition.
Setting the STBY pin high, the device wakes up and operation is restored: the FLT pin is released while driver’s
outputs are set according to inputs, providing that relevant UVLOs are not active, within tWU.
Figure 14. Standby timings
LIN
OUTL
FLT
STBY
tSTBYoff
tSTBY_FLT
tWU
tWU_FLT
HIN
OUTH
FLT
STBY
tSTBYoff
tSTBY_FLT
tWU
tWU_FLT
6.6
Comparator with SmartSD
The STDRIVEG611 integrates a comparator committed to the fault sensing function.
The comparator input can be connected to an external shunt resistor in order to implement a simple overcurrent
detection function with an automatic OFF-time mechanism (Smart Shutdown) providing the possibility to increase
the disable time after the fault event up to an arbitrary value without increasing the delay time of the protection.
The comparator has an internal voltage reference CINth connected to the inverting input, while the non-inverting
input is available on the CIN pin. The output signal of the comparator is filtered from glitches shorter than tCINfilter
and then fed to the Smart Shutdown logic.
The SD/OD is connected to a timing capacitor COD and a pull-up to determine the output disable time of the fault
event.
When an overcurrent is detected, gates are immediately turned off, the FLT pin is forced low to signal the state to
the controller, the SD/OD pin discharges COD down to VSSD and then the external pull-up charges it again. Once
COD reaches Vih, the gate driving restarts and FLT is released.
STDRIVEG611
Device description
DS14457 - Rev 2
page 19/33



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