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L99ASC03 数据表(PDF) 20 Page - STMicroelectronics

部件名 L99ASC03
功能描述  Brushless / sensorless 3-phase motor pre-driver for automotive applications
PDF  73 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L99ASC03 数据表(HTML) 20 Page - STMicroelectronics

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Device description
L99ASC03
20/73
DocID023504 Rev 7
2.9
Wake-up events
A wake-up event in standby mode generates a transition to Active Mode. Three possible
wake-up sources are defined, as illustrated in Table 4.
All wake-up events from VDD Standby Mode generate a low-pulse on NINT pin for
56
μs(typical).
2.10
Charge pump
The two-stage charge pump is supplied from the VS pin. External charging capacitors are
used to achieve a high current capability of the charge pump. In VBAT Standby Mode, VDD
Standby Mode or after thermal shutdown the charge pump is disabled. It is also possible to
disable the charge pump by setting the CPDIS bit to "1".
In case the charge pump output voltage remains below the VCPLOW threshold for longer
than tfCP, all gate drivers are switched off (resistive path to source) and the CPLOW flag is
set and latched. The NRDY flag shows that the charge pump is not ready after a startup
condition.
In order to minimize electromagnetic emissions, the charge pump frequency can be
modulated in a programmable range through the WOBM and WOBF bits.
Figure 10. CPLOW and NRDY bit behavior
2.11
Gate drivers
Each of the three half-bridge drivers is controlled independently by dedicated inputs for the
high-side driver (IHx, active low, with internal pull-up resistor) and for the low-side driver
(ILx, active high, with internal pull-down resistor). All the gate drivers feature a minimum
cross-current protection time (dead-time) tCCP (programmable through the CCT bits) and
Table 4. Wake-up events
Wake-up source
Description
SPI Access
CSN pin low and first rising edge on SCK pin, active only in VDD
Standby Mode
INH
High level on the INH pin, active in both standby modes



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