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L99ASC03 数据表(PDF) 38 Page - STMicroelectronics |
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L99ASC03 数据表(HTML) 38 Page - STMicroelectronics |
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38 / 73 page ![]() Electrical specifications L99ASC03 38/73 DocID023504 Rev 7 IGHx(off) Turn-off maximum peak current (SINK stage) VSHx = 0 V; PCSI = 1111; Tj =25°C 500 mA Turn-off minimum peak current (SINK stage) VSHx = 0 V; PCSI = 0001; Tj =25°C 40 mA VGHxH High-level voltage VS =6 V; ICP =20mA VSHx +7 V VS =12 V; ICP =20mA VSHx +9 VSHx +11 VSHx +13 V RGSHx Gate-source passive discharge resistance 16 20 24 k Ω Low-side driver DC parameter IGLx(on) Turn-on maximun peak current (SOURCE stage) Tj = 25°C; PCSO = 1111 -185 mA Turn-on minimum peak current (SOURCE stage) Tj = 25°C; PCSO = 0001 -12 mA IGLx(off) Turn-off maximun peak current (SINK stage) VSLx = 0 V; PCSI = 1111; Tj =25°C 700 mA Turn-off minimum peak current (SINK stage) VSLx = 0 V; PCSI = 0001; Tj =25°C 40 mA VGLxH High-level voltage VS =6 V; ICP =20mA VSLx +7 V VS =12 V; ICP =20mA VSLx +9 VSLx +11 VSLx +13 V RGSLx Gate-source passive discharge resistance 16 20 24 k Ω Gate drivers dynamic parameters tPGXxLH Propagation delay time, low to high VS = 12 V; CG =10 nF 300 700 ns Propagation delay time, high to low VS =12 V; CG =10 nF 100 170 ns tPGXx Propagation delay time, channel difference VS =12 V; CG =10 nF 115 ns tGXxR Rise time (20% to 80%) VS = 12 V; CG = 10 nF 250 ns tGXxF Fall time (80% to 20%) VS =12 V; CG = 10 nF 150 ns tCCP Programmable cross-current protection time CCT = 000 100 200 ns CCT = 001 300 400 ns CCT = 010 500 600 ns CCT = 011 700 800 ns CCT = 100 900 1000 ns CCT = 101 1200 1300 ns CCT = 110 1600 1700 ns CCT = 111 2000 2100 ns Table 18. Gate driver for external MOSFET (continued) Symbol Parameter Test condition Min. Typ. Max. Unit |
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