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STM32F101X6 数据表(PDF) 59 Page - STMicroelectronics

部件名 STM32F101X6
功能描述  Access line, advanced ARM-based 32-bit MCU with Flash memory, six 16-bit timers, ADC and seven communication interfaces
PDF  74 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F101X6 数据表(HTML) 59 Page - STMicroelectronics

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STM32F101xx
Electrical characteristics
59/74
Equation 1: RAIN max formula:
The formula above (Equation 1) is used to determine the maximum external impedance allowed for an
error below 1/4 of LSB. Here N = 12 (from 12-bit resolution).
Table 42.
RAIN max for fADC = 14 MHz
(1)
1.
Data guaranteed by design, not tested in production.
Ts (cycles)
tS (µs)
RAIN max (kΩ)
1.5
0.11
1.2
7.5
0.54
10
13.50.9619
28.52.0441
41.52.9660
55.53.9680
71.55.11104
239.5
17.1
350
Table 43.
ADC accuracy - limited test conditions(1)
1.
ADC DC accuracy values are measured after internal calibration.
Symbol
Parameter
Test conditions
Typ
Max(2)
2.
Data based on characterization, not tested in production.
Unit
ET
Total unadjusted error(3)
3.
ADC Accuracy vs. Negative Injection Current: Injecting negative current on any of the standard (non-
robust) analog input pins should be avoided as this significantly reduces the accuracy of the conversion
being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to
standard analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 5.3.12 does not
affect the ADC accuracy.
fPCLK2 = 56 MHz,
fADC = 14 MHz, RAIN < 10 kΩ,
VDDA = 3 V to 3.6 V
TA = 25 °C
Measurements made after
ADC calibration
VREF+ = VDDA
±1.3
±2
LSB
EO
Offset error(3)
±1
±1.5
EG
Gain error(3)
±0.5
±1.5
ED
Differential linearity error(3)
±0.7
±1
EL
Integral linearity error(3)
±0.8
±1.5
R
AIN
t
S
f
ADC
C
ADC
2
N2
+
()
ln
×
×
----------------------------------------------------------------
R
ADC
<



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