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STM32F101X6 数据表(PDF) 48 Page - STMicroelectronics |
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STM32F101X6 数据表(HTML) 48 Page - STMicroelectronics |
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48 / 74 page ![]() Electrical characteristics STM32F101xx 48/74 5.3.12 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 33 are derived from tests performed under the conditions summarized in Table 7. All I/Os are CMOS and TTL compliant. Table 32. Electrical sensitivities Symbol Parameter Conditions Class LU Static latch-up class TA = +105 °C conforming to JESD78A II level A Table 33. I/O static characteristics Symbol Parameter Conditions Min Typ Max Unit VIL Input low level voltage(1) 1. Values based on characterization results, and not tested in production. TTL ports –0.5 0.8 V VIH Standard IO input high level voltage(1) 2VDD+0.5 IO FT(2) input high level voltage(1) 2. FT = Five-volt tolerant. 25.5V VIL Input low level voltage(1) CMOS ports –0.5 0.35 VDD V VIH Input high level voltage(1) 0.65 VDD VDD+0.5 Vhys Standard IO Schmitt trigger voltage hysteresis(3) 3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested. 200 mV IO FT Schmitt trigger voltage hysteresis(3) 5% VDD (4) mV Ilkg Input leakage current (4) 4. With a minimum of 100 mV. VSS ≤VIN ≤VDD Standard I/Os ±1 µA VIN = 5 V I/O FT 3 RPU Weak pull-up equivalent resistor(5) 5. Leakage could be higher than max. if negative current is injected on adjacent pins. VIN = VSS 30 40 50 k Ω RPD Weak pull-down equivalent resistor(6) 6. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimum (~10% order) . VIN = VDD 30 40 50 k Ω CIO I/O pin capacitance 5 pF |
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