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STM32F101X6 数据表(PDF) 43 Page - STMicroelectronics |
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STM32F101X6 数据表(HTML) 43 Page - STMicroelectronics |
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43 / 74 page ![]() STM32F101xx Electrical characteristics 43/74 5.3.7 Internal clock source characteristics The parameters given in Table 23 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 7. High-speed internal (HSI) RC oscillator LSI low speed internal RC oscillator Table 23. HSI oscillator characteristics(1) 1. VDD = 3.3 V, TA = −40 to 85 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency 8 MHz ACCHSI Accuracy of HSI oscillator TA = –40 to 85 °C ±1 ±3% TA = –10 to 85 °C ±1 ±2.5 % TA = 0 to 70 °C ±1 ±2.2 % at TA = 25 °C ±1 ±2% tsu(HSI) HSI oscillator startup time 1 2 µs IDD(HSI) HSI oscillator power consumption 80 100 µA Table 24. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = −40 to 85 °C unless otherwise specified. Symbol Parameter Conditions Min(2) 2. Value based on device characterization, not tested in production. Typ Max Unit fLSI Frequency 30 40 60 kHz tsu(LSI) LSI oscillator startup time 85 µs IDD(LSI) LSI oscillator power consumption 0.65 1.2 µA |
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