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STM32F101X6 数据表(PDF) 47 Page - STMicroelectronics

部件名 STM32F101X6
功能描述  Access line, advanced ARM-based 32-bit MCU with Flash memory, six 16-bit timers, ADC and seven communication interfaces
PDF  74 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F101X6 数据表(HTML) 47 Page - STMicroelectronics

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STM32F101xx
Electrical characteristics
47/74
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device is monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with SAE J
1752/3 standard which specifies the test board and the pin loading.
5.3.11
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latch-up
Two complementary static tests are required on 10 parts to assess the latch-up
performance:
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78 IC latch-up standard.
Table 30.
EMI characteristics
Symbol Parameter
Conditions
Monitored
frequency band
Max vs.
[fHSE/fHCLK]
Unit
8/36 MHz
SEMI
Peak level
VDD = 3.3 V, TA = 2 5°C,
LQFP100 package compliant
with SAE J 1752/3
0.1 MHz to 30 MHz
7
dBµV
30 MHz to 130 MHz
8
130 MHz to 1GHz
13
SAE EMI Level
3.5
-
Table 31.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum value(1)
1.
Values based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body model)
TA = +25 °C
conforming to
JESD22-A114
2
2000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device
model)
TA = +25 °C
conforming to
JESD22-C101
II
500



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