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ST7L09 数据表(PDF) 81 Page - STMicroelectronics |
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ST7L09 数据表(HTML) 81 Page - STMicroelectronics |
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81 / 104 page  ST7L05, ST7L09 81/104 13.6 MEMORY CHARACTERISTICS TA = -40 to +105°C, unless otherwise specified 13.6.1 RAM and Hardware Registers 13.6.2 Flash Program Memory 13.6.3 EEPROM Data Memory Notes: 1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg- isters (only in HALT mode). Guaranteed by construction, not tested in production. 2. Up to 32 bytes can be programmed at a time. 3. The data retention time increases when the TA decreases. 4. Data based on reliability test results and monitored in production. 5. Guaranteed by Design. Not tested in production. Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode1) HALT mode (or RESET) 1.6 V Symbol Parameter Conditions Min Typ Max Unit VDD Operating voltage for Flash write/erase Refer to operating range of VDD with TA, Table 13.3.1, “General Operating Condi- tions,” on page 75 3.0 5.5 V tPROG Programming time for 1~32 bytes2) TA =−40 to +105°C 5 10 ms Programming time for 1.5 Kbytes TA = 25°C 0.24 0.48 s tRET Data retention4) TA = 55°C 3) 20 years NRW Write erase cycles TA = 25°C 1K cycles TA = 105°C 300 IDD Supply current Read / Write / Erase modes fCPU = 8 MHz, VDD =5.5V 2.65 mA No Read/No Write Mode 100 µA Power down mode / HALT 0 0.1 Symbol Parameter Conditions Min Typ Max Unit VDD Operating voltage for EEPROM write/ erase Refer to operating range of VDD with TA, Table 13.3.1, “General Operating Condi- tions,” on page 75 3.0 5.5 V tPROG Programming time for 1~32 bytes TA =−40 to +105°C 5 10 ms tRET 4) Data retention with 1K cycling (TPROG =−40 to +105°C) TA = 55°C 3) 20 years Data retention with 10K cycling (TPROG =−40 to +105°C) 10 Data retention with 100K cycling (TPROG =−40 to +105°C) 1 1 |
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