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RA4E2 数据表(PDF) 62 Page - Renesas Technology Corp |
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RA4E2 数据表(HTML) 62 Page - Renesas Technology Corp |
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62 / 91 page ![]() SDA Timing parameters used 0.3 × VDD 0.7 × VDD = Active Drive by Master NM_SDA CM_SDA NM_SCL CM_SCL SCL A6 A5 C1 C2 tSU_STO tMMlock tMMoverlap tCAS tSCO 0.3 × VDD 0.7 × VDD 0.3 × VDD 0.7 × VDD 0.3 × VDD 0.7 × VDD 0.3 × VDD 0.7 × VDD 0.3 × VDD 0.7 × VDD OD or PP Open- Drain OD or PP Open- Drain = Open-Drain class Pull-Up by master = High-Z by Master Figure 2.51 I3C timing (open drain timing parameters) 2.3.11 SSIE Timing Table 2.34 SSIE timing (1 of 2) (1) High drive output is selected with the Port Drive Capability bit in the PmnPFS register. (2) Use pins that have a letter appended to their names, for instance “_A”, “_B” or “_C” to indicate group membership. For the SSIE interface, the AC portion of the electrical characteristics is measured for each group. Parameter Symbol Target specification Unit Comments Min. Max. SSIBCK0 Cycle Master tO 80 — ns Figure 2.52 Slave tI 80 — ns High level/ low level Master tHC/tLC 0.35 — tO Slave 0.35 — tI Rising time/ falling time Master tRC/tFC — 0.15 tO / tI Slave — 0.15 tO / tI RA4E2 Datasheet 2. Electrical Characteristics R01DS0413EJ0150 Rev.1.50 May 29, 2026 Page 62 of 91 |
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