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RA4E2 数据表(PDF) 73 Page - Renesas Technology Corp

部件名 RA4E2
功能描述  Renesas Microcontrollers
PDF  91 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

RA4E2 数据表(HTML) 73 Page - Renesas Technology Corp

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tVOFF
Vdet2
VCC
tdet
tdet
tLVD2
Td(E-A)
LVCMPCR.LVD2E
LVD2
Comparator output
LVD2CR0.CMPE
LVD2SR.MON
Internal reset signal
(active-low)
When LVD2CR0.RN = 0
When LVD2CR0.RN = 1
VLVH
tLVD2
Figure 2.65
Voltage detection circuit timing (Vdet2)
2.10
Flash Memory Characteristics
2.10.1
Code Flash Memory Characteristics
Table 2.43
Code flash memory characteristics (1 of 2)
Conditions: Program or erase: FCLK = 4 to 50 MHz
Read: FCLK ≤ 50 MHz
Parameter
Symbol
FCLK = 4 MHz
20 MHz ≤ FCLK ≤ 50 MHz
Unit
Test
conditions
Min
Typ*6 Max Min
Typ*6
Max
Programming time
NPEC ≤ 100 times
128-byte
tP128
—
0.75
13.2 —
0.34
6.0
ms
8-KB
tP8K
—
49
176
—
22
80
ms
32-KB
tP32K
—
194
704
—
88
320
ms
Programming time
NPEC > 100 times
128-byte
tP128
—
0.91
15.8 —
0.41
7.2
ms
8-KB
tP8K
—
60
212
—
27
96
ms
32-KB
tP32K
—
234
848
—
106
384
ms
Erasure time
NPEC ≤ 100 times
8-KB
tE8K
—
78
216
—
43
120
ms
32-KB
tE32K
—
283
864
—
157
480
ms
Erasure time
NPEC > 100 times
8-KB
tE8K
—
94
260
—
52
144
ms
32-KB
tE32K
—
341
1040 —
189
576
ms
Reprogramming/erasure cycle*4
NPEC
10000*1 —
—
10000*1
—
—
Times
RA4E2 Datasheet
2. Electrical Characteristics
R01DS0413EJ0150 Rev.1.50
May 29, 2026
Page 73 of 91



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