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RA4E2 数据表(PDF) 25 Page - Renesas Technology Corp

部件名 RA4E2
功能描述  Renesas Microcontrollers
PDF  91 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

RA4E2 数据表(HTML) 25 Page - Renesas Technology Corp

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Ta
Average vaAverage value of the tested upper-limit samples during product evaluation.
-40
10.92
13.39
25
11.85
15.42
85
14.88
20.98
105
17.82
25.48
125
24.54
33.93
Figure 52.4 Temperature dependency in Deep Software Standby mode, Power not supplied to SRAM or USB resume d
1
10
100
‐40
‐20
0
20
40
60
80
100
Ta (℃)
Average value of the tested middle samples during product evaluation.
Average value of the tested upper‐limit samples during product evaluation.
Figure 2.4
Temperature dependency in Deep Software Standby mode, power not supplied to SRAM or USB
resume detecting unit, power-on reset circuit low power function disabled (reference data)
Ta
Average vaAverage value of the tested upper-limit samples during product evaluation.
-40
4.84
7.04
25
4.98
8.36
85
7.32
13.35
105
10.19
17.67
125
16.63
25.91
Figure 52.5 Temperature dependency in Deep Software Standby mode, Power not supplied to SRAM or USB resume d
1
10
100
‐40
‐20
0
20
40
60
80
100
Ta (℃)
Average value of the tested middle samples during product evaluation.
Average value of the tested upper‐limit samples during product evaluation.
Figure 2.5
Temperature dependency in Deep Software Standby mode, power not supplied to SRAM or USB
resume detecting unit, power-on reset circuit low power function enabled (reference data)
2.2.6
VCC Rise and Fall Gradient and Ripple Frequency
Table 2.9
Rise and fall gradient characteristics (1 of 2)
Parameter
Symbol
Min
Typ
Max
Unit
Test
conditions
VCC rising gradient
Voltage monitor 0 reset disabled at startup
SrVCC
0.0084 —
20
ms/V
—
Voltage monitor 0 reset enabled at startup
0.0084 —
—
—
SCI/USB boot mode*1
0.0084 —
20
—
RA4E2 Datasheet
2. Electrical Characteristics
R01DS0413EJ0150 Rev.1.50
May 29, 2026
Page 25 of 91



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