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RA4E2 数据表(PDF) 27 Page - Renesas Technology Corp |
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RA4E2 数据表(HTML) 27 Page - Renesas Technology Corp |
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27 / 91 page ![]() Regarding θja and Ψjt, refer to Table 2.11. Table 2.11 Thermal Resistance Parameter Package Symbol Value*1 Unit Test conditions Thermal Resistance 32-pin QFN (PWQN0032KE-A) θja 36.8 °C/W JESD 51-2 and 51-7 compliant 48-pin QFN (PWQN0048KC-A) 29.7 64-pin LQFP (PLQP0064KB-C) 41.3 36-pin BGA (PLBG0036KA-A) 53.7 64-pin BGA (PLBG0064KB-A) 51.6 32-pin QFN (PWQN0032KE-A) Ψjt 0.36 °C/W JESD 51-2 and 51-7 compliant 48-pin QFN (PWQN0048KC-A) 0.27 64-pin LQFP (PLQP0064KB-C) 1.39 36-pin BGA (PLBG0036KA-A) 1.70 64-pin BGA (PLBG0064KB-A) 1.70 Note 1. The values are reference values when the 4-layer board is used. Thermal resistance depends on the number of layers or size of the board. For details, refer to the JEDEC standards. 2.2.7.1 Calculation Guide of ICCmax Table 2.12 shows the power consumption of each unit. Table 2.12 Power consumption of each unit (1 of 2) Dynamic current/ Leakage current MCU domain Category Item Frequency [MHz] Current [uA/MHz] Current*1 [mA] Leakage current Analog LDO and Leak*2 Ta = 75 °C*3 — — 25.10 Ta = 85 °C*3 — — 30.64 Ta = 95 °C*3 — — 35.90 Ta = 105 °C*3 — — 41.60 RA4E2 Datasheet 2. Electrical Characteristics R01DS0413EJ0150 Rev.1.50 May 29, 2026 Page 27 of 91 |
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