| 数据搜索系统,热门电子元器件搜索 |
|
ST7261 数据表(PDF) 58 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
ST7261 数据表(HTML) 58 Page - STMicroelectronics |
|
58 / 80 page ![]() ST7261 58/80 EMC CHARACTERISTICS (Cont’d) 11.7.2 Absolute Electrical Sensitivity Based on three different tests (ESD, LU and DLU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. For more details, re- fer to the AN1181 ST7 application note. 11.7.2.1 Electro-Static Discharge (ESD) Electro-Static Discharges (1 positive then 1 nega- tive pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends of the number of supply pins of the device (3 parts*(n+1) supply pin). The Human Body Model is simulated. This test conforms to the JESD22-A114A stand- ard. See Figure 36 and the following test sequenc- es. Human Body Model Test Sequence – CL is loaded through S1 by the HV pulse gener- ator. – S1 switches position from generator to R. – A discharge from CL through R (body resistance) to the ST7 occurs. – S2 must be closed 10 to 100ms after the pulse delivery period to ensure the ST7 is not left in charge state. S2 must be opened at least 10ms prior to the delivery of the next pulse. 11.7.2.2 Designing hardened software to avoid noise problems EMC characterization and optimization are per- formed at component level with a typical applica- tion environment and simplified MCU software. It should be noted that good EMC performance is highly dependent on the user application and the software in particular. Therefore it is recommended that the user applies EMC software optimization and prequalification tests in relation with the EMC level requested for his application. Software recommendations: The software flowchart must include the manage- ment of runaway conditions such as: – Corrupted program counter – Unexpected reset – Critical Data corruption (control registers...) Prequalification trials: Most of the common failures (unexpected reset and program counter corruption) can be repro- duced by manually forcing a low state on the RE- SET pin or the Oscillator pins for 1 second. To complete these trials, ESD stress can be ap- plied directly on the device,over the range of spec- ification values.When unexpected behaviour is de- tected, the sofware can be hardened to prevent unrecoverable errors occurring (see application note AN1015). Absolute Maximum Ratings Figure 36. Typical Equivalent ESD Circuits Notes: 1. Data based on characterization results, not tested in production. Symbol Ratings Conditions Maximum value 1) Unit VESD(HBM) Electro-static discharge voltage (Human Body Model) TA=+25°C 2000 V ST7 S2 R=1500 Ω S1 HIGH VOLTAGE CL=100pF PULSE GENERATOR HUMAN BODY MODEL |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |