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L6460 数据表(PDF) 64 Page - STMicroelectronics |
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L6460 数据表(HTML) 64 Page - STMicroelectronics |
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64 / 139 page  Power bridges L6460 64/139 Doc ID 17713 Rev 1 side power MOS for the whole off time. In fast decay mode the current is recirculated through the high and low side power MOS opposite respect to those forcing current to increase. Mixed decay mode is a selectable mix of the previous two modes (fast decay followed by slow decay) and allows the user to find the best trade off between load current ripple and fast current levels transition. Additionally, by setting the SeqMixedOnlyInDecreasingPh bit in the StpCfg1 register, the user can choose to apply the fast decay percentage in mixed mode always or only when the current is decreasing (i.e from 90° to 180° and from 270° to 360° of the sinusoidal wave). By using SPI interface the user can choose: ● Control type (external firmware control, half step, normal drive, wave drive, micro-step). ● Up to 16 current levels (quasi-sinusoidal increments) for each bridge. ● Current direction. ● Decay mode. ● Blanking time. ● Off time (32 values from 2 µs to 64µs). ● Percentage of fast decay respect to toff (when in mixed decay mode). |
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