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L6460 数据表(PDF) 21 Page - STMicroelectronics |
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L6460 数据表(HTML) 21 Page - STMicroelectronics |
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21 / 139 page  L6460 Electrical specifications Doc ID 17713 Rev 1 21/139 VSWD_UV_f Under voltage falling threshold (14) 84.5 87 89.5 % VSWD_UV_r Under voltage rising threshold (14) 90.5 93 95.5 % VSWD_UV_hys Under voltage hysteresis 6 % tprim_uv Under voltage deglitch filter 5 µs Vovc Over current threshold voltage 250 300 350 mV tdeglitch Current limit deglitch time 50 ns tI_lim Current limit response time Normal operating mode (no UV) (11) 500 900 ns tI_limUV Current Limit response time in UV condition. UV condition (12) 380 550 ns FSWD_PWM Operating frequency Fosc/64 kHz Power bridges RDSon1_2 Bridge 1 and 2 diagonal RDSon I = 1.4A, VSupply = 36V, Tjunction = 125°C 0.6 1.1 Ω RDSon3_4 Bridge 3 and 4 diagonal RDSon I = 1A, VSupply = 36V, Tjunction = 125°C 0.85 1.65 Ω IMAX1_2 Bridge 1 and 2 operative rms current 2.5 A IMAX3_4 Bridge 3 and 4 operative rms current 1.5 A Idss Output leakage current. Tjunction = 125°C -50 +50 µA IQ_LP Output leakage current in “low power mode” VSupply = 36V, Tjunction = 125°C -10 +10 µA IOC_LS1_2 Low side current protection for bridges 1 and 2(15) MtrXSideYILimSel[1:0]=00 MtrXSideYILimSel[1:0]=01 MtrXSideYILimSel[1:0]=10 MtrXSideYILimSel[1:0]=11 (16) 0.6 1.4 2.4 2.4 1 2 3 3 1.6 2.6 3.6 3.6 A IOC_HS1_2 High side current protection for bridges 1 and 2(15) MtrXSideYILimSel[1:0]=00 MtrXSideYILimSel[1:0]=01 MtrXSideYILimSel[1:0]=10 MtrXSideYILimSel[1:0]=11(1 6) 0.7 1.5 2.5 2.5 1 2 3 3 1.7 2.7 3.7 3.7 A IOC_LS3_4 Low side current protection for bridges 3 and 4(15) MtrXSideYILimSel[1:0]=11 (17)(18) 1.55 2.5 A IOC_HS3_4 High side current protection for bridges 3 and 4(15) MtrXSideYILimSel[1:0]=11(1 7)(18) 1.6 2.5 A tfilter Current limit filter time 25 μs Table 5. Electrical characteristics (continued) Parameter Description Test condition Min Typ Max Unit |
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