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L6460 数据表(PDF) 24 Page - STMicroelectronics |
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L6460 数据表(HTML) 24 Page - STMicroelectronics |
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24 / 139 page ![]() Electrical specifications L6460 24/139 Doc ID 17713 Rev 1 VCurrRef Battery charger control loop feedback reference current SelCurrRef = ‘00’ (8) 0.873 0.9 0.927 V SelCurrRef = ‘01’ 1.394 1.437 1.48 V SelCurrRef = ‘10’ 1.746 1.8 1.854 V SelCurrRef = ‘11’ 2.182 2.25 2.318 V Vout Output voltage range VSupply = 36V (27) 1.412 30 V Iload Output load current VSupply = 36V 0.002 3 A RDSon Internal high/low side RDSon Tjunction = 125°C; ILOAD = 1.5A 0.3 0.4 Ω Vloop Loop voltage accuracy ±3% VBC_UV_f Under voltage falling threshold (28) 84.5 87 89.5 % VBC_UV_r Under voltage rising threshold (28) 90.5 93 95.5 % VBC_UV_hys Under voltage hysteresis 6 % taux_UV Under voltage deglitch filter 5 µs Ilimit Current limit protection 3.2 5 A tdeglitch Current limit deglitch time 50 ns tI_lim Current limit response time Normal operating mode (no UV) (11) 480 700 ns tI_limUV Current limit response time in UV condition. UV condition (12) 350 500 ns tr Switching output rise time VSupply = 36V, RLOAD = 422 Ω (25) 530 ns tf Switching output fall time VSupply = 36V, RLOAD = 10 Ω (25) 10 50 ns tdead Crossover dead time 100 ns FBCPWM Operating frequency Fosc/64 kHz ADC with A2DType=0 (29) IMR Measurement range A2dType = 0 0 V3v3 V INL Integral non-linearity A2dType = 0(30)(31) ±2 LSB DNL Differential non-linearity A2dType = 0(32)(31) ±2 LSB OE Offset error A2dType = 0(33) ±4 LSB OEDrift Offset error drift A2dType = 0 over time and temperature ±3 LSB GE Gain error A2dType = 0(34) ±4 LSB GEDrift Gain error drift A2dType = 0 over time and temperature ±4 LSB tconv Minimum conversion time 55 µs Resolution (35) 8bits Table 5. Electrical characteristics (continued) Parameter Description Test condition Min Typ Max Unit |
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