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MPC5643L 数据表(PDF) 82 Page - Freescale Semiconductor, Inc |
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MPC5643L 数据表(HTML) 82 Page - Freescale Semiconductor, Inc |
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82 / 136 page  MPC5643L Microcontroller Data Sheet, Rev. 8.1 Electrical characteristics Freescale Semiconductor 82 EMC testing was performed and documented according to these standards: [IEC61508-2-7.4.5.1.b, IEC61508-2-7.2.3.2.e, IEC61508-2-Table-A.17 (partially), IEC61508-2-Table-B.5(partially),SRS2110] EME testing was performed and documented according to these standards: [IEC 61967-2 & -4] EMS testing was performed and documented according to these standards: [IEC 62132-2 & -4] Contact FSL for detailed information pertaining to the EMC, EME, and EMS testing and results. 3.6 Electrostatic discharge (ESD) characteristics Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n + 1) supply pin). This test conforms to the AEC-Q100-002/-003/-011 standard. Table 14. EMI emission testing specifications Symbol Parameter Conditions Min Typ Max Unit VEME CC Radiated emissions Configuration A; frequency range 150 kHz–50 MHz —16— dB V Configuration A; frequency range 50–150 MHz —16— Configuration A; frequency range 150–500 MHz —32— Configuration A; frequency range 500–1000 MHz —25— Configuration B; frequency range 50–150 MHz —15— Configuration B; frequency range 50–150 MHz —21— Configuration B; frequency range 150–500 MHz —30— Configuration B; frequency range 500–1000 MHz —24— Table 15. ESD ratings1, 2 1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. 2 A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device specification requirements. Complete DC parametric and functional testing shall be performed per applicable device specification at room temperature followed by hot temperature, unless specified otherwise in the device specification. No. Symbol Parameter Conditions Class Max value3 Unit 1VESD(HBM) SR Electrostatic discharge (Human Body Model) TA =25°C conforming to AEC-Q100-002 H1C 2000 V 2VESD(MM) SR Electrostatic discharge (Machine Model) TA =25°C conforming to AEC-Q100-003 M2 200 V 3VESD(CDM) SR Electrostatic discharge (Charged Device Model) TA =25°C conforming to AEC-Q100-011 C3A 500 V 750 (corners) |
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