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MPC5643L 数据表(PDF) 84 Page - Freescale Semiconductor, Inc |
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MPC5643L 数据表(HTML) 84 Page - Freescale Semiconductor, Inc |
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84 / 136 page  MPC5643L Microcontroller Data Sheet, Rev. 8.1 Electrical characteristics Freescale Semiconductor 84 The recommended external ballast transistor is the bipolar transistor BCP68 with the gain range of 85 up to 375 (for IC=500mA, VCE=1V) provided by several suppliers. This includes the gain variations BCP68-10, BCP68-16 and BCP68-25.The most important parameters for the interoperability with the integrated voltage regulator are the DC current gain (hFE) and the temperature coefficient of the gain (XTB). While the specified gain range of most BCP68 vendors is the same, there are slight variations in the temperature coefficient parameter. MPC5643LVoltage regulator operation was simulated against the typical variation on temperature coefficient and against the specified gain range to have a robust design. 1 derating factor 12mW/degC 2 Adjust resistor at bipolar transistor collector for 3.3V to avoid VCE<VCE SAT Table 18. Voltage regulator electrical specifications Symbol Parameter Conditions Min Typ Max Unit Cext External decoupling/ stability capacitor Min, max values shall be granted with respect to tolerance, voltage, temperature, and aging variations. 12 —40 µF SR Combined ESR of external capacitor —0.01 —0.10 SR Number of pins for external decoupling/ stability capacitor —5 —— — CV1V2 SR Total capacitance on 1.2 V pins Ceramic capacitors, taking into account tolerance, aging, voltage and temperature variation 300 — 900 nF tSU Start-up time after main supply stabilization Cload =10µF×4 — —2.5 ms — Main High Voltage Power - Low Voltage Detection, upper threshold —— —2.9 V — D Main supply low voltage detector, lower threshold —2.6 —— V — D Digital supply high voltage detector upper threshold Before a destructive reset initialization phase completion 1.355 — 1.495 V After a destructive reset initialization phase completion 1.39 —1.47 — D Digital supply high voltage detector lower threshold Before a destructive reset initialization phase completion 1.315 — 1.455 V After a destructive reset initialization phase completion 1.35 —1.38 |
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