MPC5643L datasheet(83/136 Pages) FREESCALE

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Electrical characteristics

MPC5643L Microcontroller Data Sheet, Rev. 8.1

Freescale Semiconductor

3.7

Static latch-up (LU)

Two complementary static tests are required on six parts to assess the latch-up performance:

•

A supply overvoltage is applied to each power supply pin.

•

A current injection is applied to each input, output and configurable I/O pin.

These tests are compliant with the EIA/JESD 78 IC latch-up standard.

3.8

Voltage regulator electrical characteristics

The voltage regulator is composed of the following blocks:

•

High power regulator HPREG1 (internal ballast to support core current)

•

High power regulator HPREG2 (external NPN to support core current)

•

Low voltage detector (LVD_MAIN_1) for 3.3 V supply to IO (VDDIO)

•

Low voltage detector (LVD_MAIN_2) for 3.3 V supply (VDDREG)

•

Low voltage detector (LVD_MAIN_3) for 3.3 V flash supply (VDDFLASH)

•

Low voltage detector (LVD_DIG_MAIN) for 1.2 V digital core supply (HPVDD)

•

Low voltage detector (LVD_DIG_BKUP) for the self-test of LVD_DIG_MAIN

•

High voltage detector (HVD_DIG_MAIN) for 1.2 V digital CORE supply (HPVDD)

•

High voltage detector (HVD_DIG_BKUP) for the self-test of HVD_DIG_MAIN.

•Power on Reset (POR)

HPREG1 uses an internal ballast to support the core current. HPREG2 is used only when external NPN transistor is present on

board to supply core current. The MPC5643L always powers up using HPREG1 if an external NPN transistor is present. Then

the MPC5643L makes a transition from HPREG1 to HPREG2. This transition is dynamic. Once HPREG2 is fully operational,

the controller part of HPREG1 is switched off.

The following bipolar transistors are supported:

•

BCP68 from ON Semiconductor

•

BCX68 from Infineon

3 Data based on characterization results, not tested in production.

Table 16. Latch-up results

No.

Symbol

Parameter

Conditions

Class

Static latch-up class

TA = 125 °C conforming to JESD 78

II level A

Table 17. Recommended operating characteristics

Symbol

Parameter

Value

Unit

hFE( )

DC current gain (Beta)

85 - 375

—

Maximum power dissipation @

TA=25°C

1.5

ICMaxDC

Maximum peak collector current

1.0

VCESAT

Collector-to-emitter saturation

voltage(Max)

6002

VBE

Base-to-emitter voltage (Max)

1.0



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