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MPC5643L 数据表(PDF) 99 Page - Freescale Semiconductor, Inc |
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MPC5643L 数据表(HTML) 99 Page - Freescale Semiconductor, Inc |
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99 / 136 page  Electrical characteristics MPC5643L Microcontroller Data Sheet, Rev. 8.1 Freescale Semiconductor 99 3.16 Flash memory electrical characteristics 3 This is the maximum frequency that the analog portion of the ADC can attain. A sustained conversion at this frequency is not possible. 4 During the sample time the input capacitance CS can be charged/discharged by the external source. The internal resistance of the analog source must allow the capacitance to reach its final voltage level within tsample. After the end of the sample time tsample, changes of the analog input voltage have no effect on the conversion result. Values for the sample clock tsample depend on programming. 5 This parameter does not include the sample time t sample, but only the time for determining the digital result and the time to load the result register with the conversion result. 6 See Figure 8. 7 For the 144-pin package 8 No missing codes Table 26. Flash memory program and erase electrical specifications No. Symbol Parameter Typ1 1 Typical program and erase times represent the median performance and assume nominal supply values and operation at 25C. These values are characterized, but not tested.I Factory Avg Initial Max2 2 Initial Max program and erase times provide guidance for time-out limits used in the factory and apply for < 100 program/erase cycles, nominal supply values and operation at 25C. These values are verified at production test. Lifetime Max3 3 Lifetime Max program and erase times apply across the voltage, temperature, and cycling range of product life. These values are characterized, but not tested. Unit 1TDWPROGRAM * 4 4 Program times are actual hardware programming times and do not include software overhead. Double word (64 bits) program time4 38 — — 500 µs 2TPPROGRAM * 5 Page(128 bits) program time5 5 Program times are actual hardware programming times and do not include software overhead. 45 53 160 500 µs 3T16KPPERASE * 5 16 KB block pre-program and erase time 270 1000 500 5000 ms 4T48KPPERASE * 5 48 KB block pre-program and erase time 625 1500 750 5000 ms 5T64KPPERASE * 5 64 KB block pre-program and erase time 800 1800 900 5000 ms 6T128KPPERASE * 5 128 KB block pre-program and erase time 1500 2600 1300 7500 ms 7T256KPPERASE * 5 256 KB block pre-program and erase time 3000 5200 2600 15000 ms |
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