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M24LR04E-R 数据表(PDF) 127 Page - STMicroelectronics

部件名 M24LR04E-R
功能描述  4-Kbit EEPROM with password protection, dual interface & energy harvesting: 400 kHz I²C bus & ISO 15693 RF protocol at 13.56 MHz
PDF  142 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M24LR04E-R 数据表(HTML) 127 Page - STMicroelectronics

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M24LR04E-R
RF electrical parameters
Doc ID 022208 Rev 5
127/142
29
RF electrical parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device in RF mode.
The parameters in the DC and AC Characteristic tables that follow are derived from tests
performed under the Measurement Conditions summarized in the relevant tables. Designers
should check that the operating conditions in their circuit match the measurement conditions
when relying on the quoted parameters.
Table 123.
RF characteristics(1) (2)
Symbol
Parameter
Condition
Min
Typ
Max
Unit
fCC
External RF signal frequency
13.553
13.56
13.567 MHz
H_ISO
Operating field according to ISO
TA = -40 °C to 85 °C
150
5000
mA/
m
MICARRIER
10% carrier modulation index (3)
MI=(A-B)/(A+B)
150 mA/m > H_ISO > 1000
mA/m
15
30
%
H_ISO > 1000 mA/m
10
30
tRFR,tRFF
10% rise and fall time
0.5
3.0
µs
tRFSBL
10% minimum pulse width for bit
7.1
9.44
µs
MICARRIER
100% carrier modulation index
MI=(A-B)/(A+B)(4)
95
100
%
tRFR,tRFF
100% rise and fall time
0.5
3.5
µs
tRFSBL
100% minimum pulse width for bit
7
9.44
µs
tMIN CD
Minimum time from carrier
generation to first data
From H-field min
1
ms
fSH
Subcarrier frequency high
FCC/32
423.75
kHz
fSL
Subcarrier frequency low
FCC/28
484.28
kHz
t1
Time for M24LR04E-R response
4224/FS
318.6
320.9
323.3
µs
t2
Time between commands
4224/FS
309
311.5
314
µs
Wt
RF write time (including internal
Verify)
5.75
ms
ICC_RF
Operating current (Read)(5)
VAC0-VAC1 (4 V peak to peak)
20
µA
CTUN
Internal tuning capacitor in SO8(6)
f = 13.56 MHz
24.8
27.5
30.2
pF
VBACK
Backscattered level as defined by
ISO test
ISO10373-7
10
mV



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