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M95128-RMB6TG 数据表(PDF) 33 Page - STMicroelectronics

部件名 M95128-RMB6TG
功能描述  128-Kbit serial SPI bus EEPROM with high-speed clock
PDF  49 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M95128-RMB6TG 数据表(HTML) 33 Page - STMicroelectronics

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M95128-W M95128-R M95128-DF
DC and AC parameters
Doc ID 5798 Rev 16
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Table 13.
Capacitance
Symbol
Parameter
Test conditions(1)
1.
Sampled only, not 100% tested, at TA = 25 °C and a frequency of 5 MHz.
Min.
Max.
Unit
COUT
Output capacitance (Q)
VOUT = 0 V
8
pF
CIN
Input capacitance (D)
VIN = 0 V
8
pF
Input capacitance (other pins)
VIN = 0 V
6
pF
Table 14.
Cycling performance by groups of four bytes
Symbol
Parameter(1)
1.
Cycling performance for products identified by process letter K.
Test conditions
Min.
Max.
Unit
Ncycle
Write cycle endurance(2)
2.
The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N, 4*N+1,
4*N+2, 4*N+3] where N is an integer. The Write cycle endurance is defined by characterization and
qualification.
TA
≤ 25 °C,
VCC(min) < VCC < VCC(max)
4,000,000
Write cycle(3)
3.
A Write cycle is executed when either a Page Write, a Byte Write, a WRSR, a WRID or an LID instruction is
decoded. When using the Byte Write, the Page Write or the WRID instruction, refer also to Section 6.6.1:
Cycling with Error Correction Code (ECC).
TA = 85 °C,
VCC(min) < VCC < VCC(max)
1,200,000
Table 15.
Memory cell data retention
Parameter
Test conditions
Min.
Unit
Data retention(1)
1.
For products identified by process letter K. The data retention behavior is checked in production. The 200-
year limit is defined from characterization and qualification results.
TA = 55 °C
200
Year



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