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M95128-RMB6TG 数据表(PDF) 33 Page - STMicroelectronics |
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M95128-RMB6TG 数据表(HTML) 33 Page - STMicroelectronics |
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33 / 49 page ![]() M95128-W M95128-R M95128-DF DC and AC parameters Doc ID 5798 Rev 16 33/49 Table 13. Capacitance Symbol Parameter Test conditions(1) 1. Sampled only, not 100% tested, at TA = 25 °C and a frequency of 5 MHz. Min. Max. Unit COUT Output capacitance (Q) VOUT = 0 V 8 pF CIN Input capacitance (D) VIN = 0 V 8 pF Input capacitance (other pins) VIN = 0 V 6 pF Table 14. Cycling performance by groups of four bytes Symbol Parameter(1) 1. Cycling performance for products identified by process letter K. Test conditions Min. Max. Unit Ncycle Write cycle endurance(2) 2. The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N, 4*N+1, 4*N+2, 4*N+3] where N is an integer. The Write cycle endurance is defined by characterization and qualification. TA ≤ 25 °C, VCC(min) < VCC < VCC(max) 4,000,000 Write cycle(3) 3. A Write cycle is executed when either a Page Write, a Byte Write, a WRSR, a WRID or an LID instruction is decoded. When using the Byte Write, the Page Write or the WRID instruction, refer also to Section 6.6.1: Cycling with Error Correction Code (ECC). TA = 85 °C, VCC(min) < VCC < VCC(max) 1,200,000 Table 15. Memory cell data retention Parameter Test conditions Min. Unit Data retention(1) 1. For products identified by process letter K. The data retention behavior is checked in production. The 200- year limit is defined from characterization and qualification results. TA = 55 °C 200 Year |
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