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M95128-RMB6TG 数据表(PDF) 36 Page - STMicroelectronics

部件名 M95128-RMB6TG
功能描述  128-Kbit serial SPI bus EEPROM with high-speed clock
PDF  49 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M95128-RMB6TG 数据表(HTML) 36 Page - STMicroelectronics

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DC and AC parameters
M95128-W M95128-R M95128-DF
36/49
Doc ID 5798 Rev 16
Table 18.
DC characteristics (M95128-DF, device grade 6)
Symbol
Parameter
Test conditions in addition to those
defined in Table 11 and Table 12(1)
Min.
Max.
Unit
ILI
Input leakage
current
VIN = VSS or VCC
± 2
µA
ILO
Output leakage
current
S = VCC, voltage applied on Q = VSS or VCC
± 2
µA
ICC
Supply current
(Read)
VCC = 1.7V, C = 0.1VCC or 0.9 VCC,
at 5 MHz, Q = open
2mA
ICC0
(2)
Supply current
(Write)
VCC = 1.7 V, during tW, S = VCC
3mA
ICC1
Supply current
(Standby)
VCC = 1.7 V, S = VCC, VIN = VSS or VCC
1µA
VIL
Input low voltage
1.7 V
≤VCC < 2.5 V
–0.45
0.25 VCC
V
VIH
Input high voltage
1.7 V
≤VCC < 2.5 V
0.75 VCC
VCC+1
V
VOL
Output low voltage
IOL = 0.15 mA, VCC = 1.7 V
0.3
V
V
OH
Output high voltage
IOH = –0.1 mA, VCC = 1.7 V
0.8 VCC
V
1.
If the application uses the M95128-DF devices at 2.5 V
≤ VCC ≤ 5.5 V and –40 °C ≤TA ≤ +85 °C, please refer to Table 16:
DC characteristics (M95128-W, device grade 6), rather than to the above table.
2.
Characterized only, not tested in production.



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