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M95128-RMB6TG 数据表(PDF) 36 Page - STMicroelectronics |
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M95128-RMB6TG 数据表(HTML) 36 Page - STMicroelectronics |
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36 / 49 page ![]() DC and AC parameters M95128-W M95128-R M95128-DF 36/49 Doc ID 5798 Rev 16 Table 18. DC characteristics (M95128-DF, device grade 6) Symbol Parameter Test conditions in addition to those defined in Table 11 and Table 12(1) Min. Max. Unit ILI Input leakage current VIN = VSS or VCC ± 2 µA ILO Output leakage current S = VCC, voltage applied on Q = VSS or VCC ± 2 µA ICC Supply current (Read) VCC = 1.7V, C = 0.1VCC or 0.9 VCC, at 5 MHz, Q = open 2mA ICC0 (2) Supply current (Write) VCC = 1.7 V, during tW, S = VCC 3mA ICC1 Supply current (Standby) VCC = 1.7 V, S = VCC, VIN = VSS or VCC 1µA VIL Input low voltage 1.7 V ≤VCC < 2.5 V –0.45 0.25 VCC V VIH Input high voltage 1.7 V ≤VCC < 2.5 V 0.75 VCC VCC+1 V VOL Output low voltage IOL = 0.15 mA, VCC = 1.7 V 0.3 V V OH Output high voltage IOH = –0.1 mA, VCC = 1.7 V 0.8 VCC V 1. If the application uses the M95128-DF devices at 2.5 V ≤ VCC ≤ 5.5 V and –40 °C ≤TA ≤ +85 °C, please refer to Table 16: DC characteristics (M95128-W, device grade 6), rather than to the above table. 2. Characterized only, not tested in production. |
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