W25Q40BLSVIP datasheet(41/74 Pages) WINBOND

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W25Q40BL

Publication Release Date: May 04, 2012

- 41 -

Revision D

7.2.24 32KB Block Erase (52h)

The Block Erase instruction sets all memory within a specified block (32K-bytes) to the erased state of all

1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase

Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low

and shifting the instruction code “52h” followed a 24-bit block address (A23-A0) (see Figure 2). The Block

Erase instruction sequence is shown in figure 22.

The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the

Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase instruction

will commence for a time duration of tBE1 (See AC Characteristics). While the Block Erase cycle is in

progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY

bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished and the

device is ready to accept other instructions again. After the Block Erase cycle has finished the Write

Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be

executed if the addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0)

bits (see Status Register Memory Protection table).

Figure 22. 32KB Block Erase Instruction Sequence Diagram

W25Q40BLSVIP 数据表(PDF) 41 Page - Winbond