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W25Q40BLSVIP 数据表(PDF) 17 Page - Winbond |
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W25Q40BLSVIP 数据表(HTML) 17 Page - Winbond |
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17 / 74 page ![]() W25Q40BL Publication Release Date: May 04, 2012 - 17 - Revision D 7.2.2 Instruction Set Table 1 (Erase, Program Instructions)(1) INSTRUCTION NAME BYTE 1 (CODE) BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6 Write Enable 06h Write Enable for Volatile Status Register 50h Write Disable 04h Read Status Register-1 05h (S7–S0) (2) Read Status Register-2 35h (S15–S8) (2) Write Status Register 01h S7–S0 S15-S8 Page Program 02h A23–A16 A15–A8 A7–A0 D7–D0 Quad Page Program 32h A23–A16 A15–A8 A7–A0 D7–D0, … (3) Sector Erase (4KB) 20h A23–A16 A15–A8 A7–A0 Block Erase (32KB) 52h A23–A16 A15–A8 A7–A0 Block Erase (64KB) D8h A23–A16 A15–A8 A7–A0 Chip Erase C7h/60h Erase / Program Suspend 75h Erase / Program Resume 7Ah Power-down B9h Continuous Read Mode Reset (4) FFh FFh Notes: 1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “()” indicate data being read from the device on the DO pin. 2. The Status Register contents will repeat continuously until /CS terminates the instruction. 3. Quad Page Program Input Data: IO0 = D4, D0, …… IO1 = D5, D1, …… IO2 = D6, D2, …… IO3 = D7, D3, …… 4. This instruction is recommended when using the Dual or Quad “Continuous Read Mode” feature. See section 7.2.19 & 7.2.20 for more information. |
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