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W25Q40BLSVIP 数据表(PDF) 63 Page - Winbond

部件名 W25Q40BLSVIP
功能描述  2.5V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
PDF  74 Pages
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制造商  WINBOND [Winbond]
网页  http://www.winbond.com
标志 WINBOND - Winbond

W25Q40BLSVIP 数据表(HTML) 63 Page - Winbond

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W25Q40BL
Publication Release Date: May 04, 2012
- 63 -
Revision D
8.7 AC Electrical Characteristics (cont’d)
DESCRIPTION
SYMBOL
ALT
SPEC
UNIT
MIN
TYP
MAX
/HOLD Active Hold Time relative to CLK
tCHHH
5
ns
/HOLD Not Active Setup Time relative to CLK
tHHCH
5
ns
/HOLD Not Active Hold Time relative to CLK
tCHHL
5
ns
/HOLD to Output Low-Z
tHHQX(2)
tLZ
7
ns
/HOLD to Output High-Z
tHLQZ(2)
tHZ
12
ns
Write Protect Setup Time Before /CS Low
tWHSL(3)
20
ns
Write Protect Hold Time After /CS High
tSHWL(3)
100
ns
/CS High to Power-down Mode
tDP(2)
3
µs
/CS High to Standby Mode without Electronic
Signature Read
tRES1(2)
3
µs
/CS High to Standby Mode with Electronic Signature
Read
tRES2(2)
1.8
µs
/CS High to next Instruction after Suspend
tSUS(2)
20
µs
Write Status Register Time
tW
10
15
ms
Byte Program Time (First Byte) (4)
tBP1
20
50
µs
Additional Byte Program Time (After First Byte) (4)
tBP2
2.5
12
µs
Page Program Time
tPP
0.4
0.8
ms
Sector Erase Time (4KB)
tSE
50
200/400(5)
ms
Block Erase Time (32KB)
tBE1
180
800
ms
Block Erase Time (64KB)
tBE2
200
1,000
ms
Chip Erase Time
tCE
2
4
s
Notes:
1.
Clock high + Clock low must be less than or equal to 1/fC.
2.
Value guaranteed by design and/or characterization, not 100% tested in production.
3.
Only applicable as a constraint for a Write Status Register instruction when SRP[1:0]=(0,1).
4.
For multiple bytes after first byte within a page,
tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N =
number of bytes programmed.
5.
Max Value tSE with <50K cycles is 200ms and >50K & <100K cycles is 400ms.



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