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STM32F103RG 数据表(PDF) 60 Page - STMicroelectronics

部件名 STM32F103RG
功能描述  XL-density performance line ARM-based 32-bit MCU
PDF  120 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F103RG 数据表(HTML) 60 Page - STMicroelectronics

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Electrical characteristics
STM32F103xF, STM32F103xG
60/120
Doc ID 16554 Rev 3
5.3.8
PLL characteristics
The parameters given in Table 28 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 10.
5.3.9
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
Table 28.
PLL characteristics
Symbol
Parameter
Value
Unit
Min
Typ
Max(1)
1.
Based on characterization, not tested in production.
fPLL_IN
PLL input clock(2)
2.
Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT.
18.0
25
MHz
PLL input clock duty cycle
40
-
60
%
fPLL_OUT
PLL multiplier output clock
16
-
72
MHz
tLOCK
PLL lock time
-
-
200
µs
Jitter
Cycle-to-cycle jitter
-
-
300
ps
Table 29.
Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1.
Guaranteed by design, not tested in production.
Unit
tprog
16-bit programming time
TA = –40 to +105 °C
40
52.5
70
µs
tERASE Page (2 KB) erase time
TA = –40 to +105 °C
20
-
40
ms
tME
Mass erase time
TA = –40 to +105 °C
20
-
40
ms
IDD
Supply current
Read mode
fHCLK = 72 MHz with 2 wait
states, VDD = 3.3 V
--
28
mA
Write mode
fHCLK = 72 MHz, VDD = 3.3 V
--
7
mA
Erase mode
fHCLK = 72 MHz, VDD = 3.3 V
--
5
mA
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
-
-
50
µA
Vprog
Programming voltage
2
-
3.6
V



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