STM32F103RG datasheet(43/120 Pages) STMICROELECTRONICS

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STM32F103xF, STM32F103xG

Electrical characteristics

Doc ID 16554 Rev 3

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5.3.4

Embedded reference voltage

The parameters given in Table 13 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 10.

5.3.5

Supply current characteristics

The current consumption is a function of several parameters and factors such as the

operating voltage, ambient temperature, I/O pin loading, device software configuration,

operating frequencies, I/O pin switching rate, program location in memory and executed

binary code.

The current consumption is measured as described in Figure 11: Current consumption

measurement scheme.

All Run-mode current consumption measurements given in this section are performed with a

reduced code that gives a consumption equivalent to Dhrystone 2.1 code.

Maximum current consumption

The MCU is placed under the following conditions:

●

All I/O pins are in input mode with a static value at VDD or VSS (no load)

●

All peripherals are disabled except when explicitly mentioned

●

The Flash memory access time is adjusted to the fHCLK frequency (0 wait state from 0

to 24 MHz, 1 wait state from 24 to 48 MHz and 2 wait states above)

●

Prefetch in ON (reminder: this bit must be set before clock setting and bus prescaling)

●

When the peripherals are enabled fPCLK1 = fHCLK/2, fPCLK2 = fHCLK

The parameters given in Table 14, Table 15 and Table 16 are derived from tests performed

under ambient temperature and VDD supply voltage conditions summarized in Table 10.

Table 13.

Embedded internal reference voltage

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT

Internal reference voltage

–40 °C < TA < +105 °C

1.16

1.20

1.26

–40 °C < TA < +85 °C

1.16

1.20

1.24

TS_vrefint

(1)

Shortest sampling time can be determined in the application by multiple iterations.

ADC sampling time when

reading the internal reference

voltage

-5.1

17.1(2)

Guaranteed by design, not tested in production.

µs

VRERINT

(2)

Internal reference voltage

spread over the temperature

range

VDD = 3 V ±10 mV

TCoeff

(2)

Temperature coefficient

100

ppm/°C

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