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AS8510-ASSP 数据表(PDF) 8 Page - ams AG

部件名 AS8510-ASSP
功能描述  Data Acquisition Device for Battery Sensors
PDF  47 Pages
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制造商  AMSCO [ams AG]
网页  http://www.ams.com
标志 AMSCO - ams AG

AS8510-ASSP 数据表(HTML) 8 Page - ams AG

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www.ams.com/AS8510
Revision 3.5
7 - 46
AS8510
Datasheet - Electrical Character i s t ics
6 Electrical Characteristics
6.1 Operating Conditions
6.2 DC/AC Characteristics for Digital Inputs and Outputs
All pull-up and pull-down have been implemented with active devices. SDO has been measured with 10pF load.
Table 3. Operating Conditions
Symbol
Parameter
Conditions
Min
Max
Units
AVDD
Positive analog supply voltage
3.0
3.6
V
AVSS
0V Ground
0
0
V
A - D
Difference in analog and digital supplies
0.1
V
DVDD
Positive digital supply
2.97
3.63
V
DVSS
0V Digital Ground
0
0
V
TAMB
Ambient temperature
-40
125
ºC
ISUPP
Supply current
5.5
mA
fCLK
System clock frequency
1
1. Nominal clock frequency from external or internal oscillator.
4.096
MHz
Table 4. INT
Symbol
Parameter
Conditions
Min
Typ
Max
Units
ILEAK
Tri-state leakage current
-1
+1
µA
VOH
High level output voltage
2.5
V
VOL
Low level output voltage
0.4
V
IO
Output Current
4
mA
Table 5. CS Input
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VIH
High level input voltage
2.0
V
VIL
Low level input voltage
0.8
V
ILEAK
Input leakage current
-1
+1
µA
Ipu
Pull up current
CS pulled to DVDD = 3.3V
-150
-15
µA
Table 6. SDI
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VIH
High level input voltage
2.0
V
VIL
Low level input voltage
0.8
V
ILEAK
Input leakage current
-1
+1
µA



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