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AS8510-ASSP 数据表(PDF) 12 Page - ams AG |
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AS8510-ASSP 数据表(HTML) 12 Page - ams AG |
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12 / 47 page ![]() www.ams.com/AS8510 Revision 3.5 11 - 46 AS8510 Datasheet - Electrical Character i s t ics 6.4.2 Differential Input Amplifier for Voltage Channel Notes: 1. Input for the voltage channel can be as high as 1220mV, in this high input case PGA will be bypassed. 2. Leakage test accuracy is limited by tester resource accuracy and tester hardware, especially at low temperatures due to condensing moisture. 3. For gain 100 PGA input common mode is 0V and the minimum supply is 3.15V. 4. The measurement ranges are referred only by the gain of input amplifier, while other parameters such as bandwidth etc. are pro- grammed independently. 5. This parameter is not measured directly in production. It is measured indirectly via gain measurements of the whole path. It is guaran- teed by design. 6. Pole frequency of input amplifier changes with changing the GAIN. The number is valid for the gain at G1, while the bandwidth will be higher for other ranges. This parameter is not measured in production. 7. Noise density calculated by taking system bandwidth as 150Hz. 8. Based on device evaluation. Not tested. 9. No impact on the measurement path. If the chopping is enabled, both the offset and offset drift will be eliminated. 10. For negative input voltages up to -160mV below ground, Input leakage is typically -20nA @ 65ºC due to forward conductance of protection diode. Table 16. Differential Input Amplifier for Voltage Channel Symbol Parameter Conditions Min Typ Max Units VIN_AMP Input voltage range 1, 10 -160 +160 mV IIN_AMP Input current 2, 10 VBAT_IN, ETR, ETS @ +160mV input voltage at 125ºC with PGA -50 2 50 nA ICM Absolute input voltage range 3 -160 +300 mV G = G1 Gain1 4, 5 100 G = G2 Gain2 4, 5 40 G = G3 Gain3 4, 5 25 G = G4 Gain4 4, 5 5 e Gain deviation i = 1, 2, 3, 4 0.9 * Gi 1.1 * Gi fP_AMP Pole frequency 5, 6 15 kHz VNDIN Noise density 5, 7 25 nV/ √Hz THD Total harmonic distortion For 150Hz input signal 70 dB εT1 Gain drift with temperature 8 -20ºC to +65ºC Gain 5, 25, referenced to room temperature ±0.3 % VOS Input referred offset 9 After trim at +65ºC 350 µV Vos_ch Chopping enabled 0 LSB VOSDRIFT Offset drift with temperature 9 350 µV |
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