 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
PIC16LC554 数据表(PDF) 69 Page - Microchip Technology |
|
|
|||||||||||||||||||||||||||||
PIC16LC554 数据表(HTML) 69 Page - Microchip Technology |
|
|
69 / 96 page  © 1997 Microchip Technology Inc. Preliminary DS40143B-page 69 PIC16C55X(A) (A) 10.1 DC CHARACTERISTICS: PIC16C55X(A)-04 (Commercial, Industrial, Extended) PIC16C55X(A)-20 (Commercial, Industrial, Extended) Standard Operating Conditions (unless otherwise stated) Operating temperature –40 °C ≤ TA ≤ +85°C for industrial and 0 °C ≤ TA ≤ +70°C for commercial and –40 °C ≤ TA ≤ +125°C for extended Param No. Sym Characteristic Min Typ† Max Units Conditions D001 D001A VDD Supply Voltage 3.0 4.5 - - 5.5 5.5 V V XT, RC and LP osc configuration HS osc configuration D002 VDR RAM Data Retention Voltage (Note 1) – 1.5* – V Device in SLEEP mode D003 VPOR VDD start voltage to ensure Power-on Reset – VSS – V See section on power-on reset for details D004 SVDD VDD rise rate to ensure Power-on Reset 0.05* – – V/ms See section on power-on reset for details D010 D010A D013 IDD Supply Current (Note 2) – – – 1.8 35 9.0 3.3 70 20 mA µA mA XT and RC osc configuration FOSC = 4 MHz, VDD = 5.5V, WDT disabled (Note 4) LP osc configuration, PIC16C55X-04 only FOSC = 32 kHz, VDD = 4.0V, WDT disabled HS osc configuration FOSC = 20 MHz, VDD = 5.5V, WDT disabled ∆IWDT WDT Current (Note 5) – 6.0 20 25 µA µA VDD = 4.0V (+85 °C to +125°C) D020 IPD Power Down Current (Note 3) – 1.0 2.5 15 µA µA VDD=4.0V, WDT disabled (+85 °C to +125°C) ∆IWDT WDT Current (Note 5) – 6.0 20 µA VDD=4.0V (+85 °C to +125°C) * These parameters are characterized but not tested. † Data in "Typ" column is at 5.0V, 25 °C, unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data. 2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current consumption. The test conditions for all IDD measurements in active operation mode are: OSC1 = external square wave, from rail to rail; all I/O pins configured as input, pulled to VDD, MCLR = VDD; WDT enabled/disabled as specified. 3: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is measured with the part in SLEEP mode, with all I/O pins configured as input and tied to VDD or VSS. 4: For RC osc configuration, current through Rext is not included. The current through the resistor can be estimated by the formula Ir = VDD/2Rext (mA) with Rext in k Ω. 5: The ∆ current is the additional current consumed when this peripheral is enabled. This current should be added to the base IDD or IPD measurement. |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
