STM32F756VG datasheet(103/228 Pages) STMICROELECTRONICS

103 / 228 page

DocID027589 Rev 4

103/228

STM32F756xx

Electrical characteristics

196

Table 22. reset and power control block characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VPVD

Programmable voltage

detector level selection

PLS[2:0]=000 (rising edge)

2.09

2.14

2.19

PLS[2:0]=000 (falling edge)

1.98

2.04

2.08

PLS[2:0]=001 (rising edge)

2.23

2.30

2.37

PLS[2:0]=001 (falling edge)

2.13

2.19

2.25

PLS[2:0]=010 (rising edge)

2.39

2.45

2.51

PLS[2:0]=010 (falling edge)

2.29

2.35

2.39

PLS[2:0]=011 (rising edge)

2.54

2.60

2.65

PLS[2:0]=011 (falling edge)

2.44

2.51

2.56

PLS[2:0]=100 (rising edge)

2.70

2.76

2.82

PLS[2:0]=100 (falling edge)

2.59

2.66

2.71

PLS[2:0]=101 (rising edge)

2.86

2.93

2.99

PLS[2:0]=101 (falling edge)

2.65

2.84

2.92

PLS[2:0]=110 (rising edge)

2.96

3.03

3.10

PLS[2:0]=110 (falling edge)

2.85

2.93

2.99

PLS[2:0]=111 (rising edge)

3.07

3.14

3.21

PLS[2:0]=111 (falling edge)

2.95

3.03

3.09

VPVDhyst(1) PVD hysteresis

100

VPOR/PDR

Power-on/power-down

reset threshold

Falling edge

1.60

1.68

1.76

Rising edge

1.64

1.72

1.80

VPDRhyst(1) PDR hysteresis

VBOR1

Brownout level 1

threshold

Falling edge

2.13

2.19

2.24

Rising edge

2.23

2.29

2.33

VBOR2

Brownout level 2

threshold

Falling edge

2.44

2.50

2.56

Rising edge

2.53

2.59

2.63

VBOR3

Brownout level 3

threshold

Falling edge

2.75

2.83

2.88

Rising edge

2.85

2.92

2.97

VBORhyst(1) BOR hysteresis

100

TRSTTEMPO

(1)(2)

POR reset temporization

0.5

1.5

3.0

IRUSH(1)

InRush current on

voltage regulator power-

on (POR or wakeup

from Standby)

160

250

ERUSH(1)

InRush energy on

voltage regulator power-

on (POR or wakeup

from Standby)

VDD = 1.7 V, TA = 105 °C,

IRUSH = 171 mA for 31 µs

5.4

µC

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